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Gallium Arsenide Wafer (GaAs)

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Premium GaAs Wafers by TFM: Advancing Gallium Arsenide Technology

At TFM, we specialize in producing premium GaAs wafers that are engineered with exceptional precision and unmatched quality. Our state-of-the-art manufacturing techniques guarantee consistent performance, solidifying our position as leaders in gallium arsenide technology. We are dedicated to continuous innovation, constantly refining our processes to uphold the highest industry standards.

What distinguishes TFM is our emphasis on customization and client satisfaction. We collaborate closely with our customers to tailor GaAs wafers to meet their specific requirements, ensuring reliable and consistent performance. With rigorous quality control, our wafers deliver the trusted results you need.

GaAs Wafer (Gallium Arsenide Wafer) Specifications

  • Size: Available in 25mm x 25mm, 10mm x 10mm, 10mm x 5mm, 5mm x 5mm, 2″ Dia, 3″ Dia, 4″ Dia, 6″ Dia (custom sizes upon request)
  • Thickness: 350 µm, 650 µm (Tolerance: ±25 µm)
  • Polished: SSP or DSP
  • Orientation: <100>, <110>, <111>
  • Redirection Precision: ±0.5°
  • TTV (Total Thickness Variation): <10 µm
  • Bow: <20 µm
  • Warp: <20 µm
  • Surface Roughness (Ra): <5 Å

GaAs Wafer (Gallium Arsenide Wafer) Physical Properties

  • Material: GaAs
  • Growth Method: VGF, VB
  • Lattice Constant: a = 5.653 Å
  • Structure: M3
  • Melting Point: 1238°C
  • Density: 5.31 g/cm³
  • Doped Materials: Si-doped, Zn-doped, Undoped
  • Type: N-type, P-type, Semi-insulating
  • Carrier Concentration: 5 x 10¹⁷ cm⁻³
  • EPD (Average): <5 x 10⁵/cm²

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FAQ

A thin film substrate is the base material upon which thin layers of materials are deposited to create electronic, optical, or mechanical devices. The substrate provides structural support and can influence the properties of the thin film.

The choice of substrate affects the film’s structural integrity, electrical properties, and overall performance. Factors like thermal expansion coefficient, surface smoothness, and chemical compatibility are crucial considerations.

Materials such as lanthanum aluminate (LaAlO₃), magnesium oxide (MgO), and strontium titanate (SrTiO₃) are commonly used due to their lattice compatibility and thermal stability, which are essential for optimal superconducting properties.

Metal substrates offer high electrical and thermal conductivity, making them suitable for applications requiring efficient heat dissipation and electrical connectivity. However, their surface properties and potential for oxidation must be managed during deposition.

These substrates are materials that can support the growth of thin films exhibiting magnetic or ferroelectric properties, essential for applications in memory devices, sensors, and actuators.

Semiconductor substrates, such as silicon wafers, serve as the foundation for integrated circuits and various electronic components, providing the necessary electrical characteristics and structural support for device fabrication.

Gallium Nitride (GaN) substrates are pivotal for high-performance optoelectronic and power devices due to their excellent thermal conductivity, high breakdown voltage, and efficiency. They are widely used in LEDs, power transistors, and RF components.

Halide crystal substrates, composed of halide compounds, are utilized in specialized optical applications, including infrared spectroscopy and laser systems, due to their unique optical properties.
Ceramic substrates provide high thermal stability, mechanical strength, and electrical insulation, making them ideal for high-frequency and high-power applications.
Proper surface preparation, including cleaning and polishing, ensures the removal of contaminants and surface irregularities, leading to improved film adhesion, uniformity, and performance.
Yes, thin films can be deposited on flexible substrates like polymers, enabling the development of flexible electronics and wearable devices. However, challenges include managing mechanical stress and ensuring film adhesion.
Challenges include ensuring lattice matching to minimize defects, managing thermal expansion differences to prevent stress and delamination, and achieving desired electrical and optical properties for specific applications.
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