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Gallium Nitride Target

Gallium Nitride Sputtering Target, GAN

Chemical Formula: GaN
CAS Number: 25617-97-4
Purity: 99.9%, 99.95%, 99.99%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Gallium Nitride sputtering targets are offered in multiple shapes, sizes, and purity grades. Thin Film Materials (TFM) manufactures and supplies high-density GaN targets with stable sputtering performance and competitive pricing for semiconductor and optoelectronic thin film deposition.

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Gallium Nitride (GaN) Sputtering Target

The Gallium Nitride (GaN) sputtering target from Thin Film Materials (TFM) is a high-purity ceramic material engineered for demanding thin-film deposition processes in semiconductor, optoelectronic, and power device manufacturing. GaN is a wide-bandgap semiconductor known for its high breakdown voltage, excellent thermal stability, and outstanding electron mobility, making it essential for next-generation electronic and photonic components.

Product Overview

TFM supplies GaN sputtering targets with high density, fine-grain microstructure, and purities ranging from 99.9% (3N) to 99.99% (4N). These materials support stable sputtering behavior and deliver uniform, high-quality GaN thin films suitable for both R&D and industrial production.

Chemical Formula: GaN
Appearance: Black to dark gray ceramic
Density: ~6.15 g/cm³
Thermal Behavior: Decomposes before melting (~2,500 °C in air)
Crystal Structure: Wurtzite (hexagonal)

Standard geometries include round, rectangular, and step-type targets. Custom specifications and bonded configurations can be manufactured upon request. Indium or elastomer bonding onto copper or titanium backing plates is available to enhance thermal conductivity and target stability.

Applications

GaN sputtering targets are widely used in high-performance electronic and photonic devices, including:

  • Semiconductors: HEMTs, high-power switching components

  • Optoelectronics: LEDs, laser diodes, photodetectors

  • RF & Microwave Devices: 5G, radar, satellite communication modules

  • Energy Technologies: Thin-film photovoltaic and photoelectrochemical devices

  • Advanced Research: Quantum materials, wide-bandgap semiconductor studies

Technical Parameters

ParameterTypical Value / RangeImportance
Purity99.9% – 99.99%Ensures high-quality films with minimal defects
Diameter25 – 150 mm (custom up to 300 mm)Compatible with a wide range of sputtering tools
Thickness3 – 6 mmInfluences sputtering performance and lifetime
Bonding OptionsIndium / ElastomerEnhances heat transfer and durability
Backing PlateCopper / TitaniumProvides mechanical support and thermal stability

Comparison with Related Materials

MaterialKey AdvantageTypical Application
GaNWide bandgap, high electron mobilityPower devices, LEDs, RF components
SiCExtreme thermal stability, hardnessPower electronics, protective coatings
ZnOTransparency, low costDisplays, general optoelectronics

This comparison helps engineers select the optimal material for their specific deposition and device requirements.

Frequently Asked Questions

QuestionAnswer
Can GaN sputtering targets be customized?Yes. Custom diameters, thicknesses, purity levels, and bonded configurations are available.
Do you provide bonding services?Yes. Indium and elastomer bonding for Cu or Ti backing plates can be supplied.
How are GaN sputtering targets packaged?Vacuum-sealed, foam-protected, and shipped in export-safe cartons or wooden crates.
Which industries use GaN targets most?Semiconductor, optoelectronics, power electronics, LED/laser manufacturing, and R&D institutions.
What purity levels are available?99%, 99.9%, and 99.99%, depending on application requirements.
What deposition methods are GaN targets used for?Mainly RF magnetron sputtering and reactive sputtering.
Can the target shape be customized?Yes. Round, rectangular, step-type, and other custom geometries are available.
What backing plate materials are recommended?Copper, OFC, and titanium for superior heat dissipation and mechanical support.
How should GaN sputtering targets be stored?Keep sealed, store in a dry and clean environment, avoid contamination.
What are the main applications of GaN films?High-frequency, high-power, and optoelectronic thin-film devices.

Packaging

All GaN sputtering targets are vacuum-sealed to prevent contamination and oxidation. Each item is secured with protective foam and delivered in export-approved cartons or wooden crates to ensure safe handling and transport.

Conclusion

The Gallium Nitride (GaN) sputtering target from TFM combines high purity, reliable performance, and flexible customization options to meet the requirements of advanced thin-film processes. With high-density ceramic fabrication, professional bonding services, and consistent sputtering stability, our GaN targets are suitable for both industrial production and cutting-edge research.

For detailed specifications, custom solutions, or a quotation, please contact sales@thinfilmmaterials.com.

Order Now

GaN Target 4N ø101.6*6mm Indium Bonded 3mm Cu B/Plate, GaN Target 4N ø25.4*3.18mm, GaN Target 4N ø25.4*3mm, GaN Target 4N ø101.6*6mm Indium Bonded 3mm Cu B/Plate, GaN target 4N 2"×3 mm, GaN target 4N 2"×6 mm, GaN Target 4N Ø50.8×3.18 mm In Bonded 3.18 mm Cu BP

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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