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Gallium Oxide-Magnesium Oxide Sputtering Target

ST0968 Gallium Oxide-Magnesium Oxide Sputtering Target, Ga2O3-MgO

Chemical FormulaGa2O3-MgO
Catalog No.ST0968
CAS Number12064-13-0
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

TFM is a leading provider of Gallium Oxide-Magnesium Oxide Sputtering Targets, offering exceptional quality products at highly competitive prices. With a focus on innovation and precision, TFM’s targets are engineered to meet the requirements of advanced applications in nanotechnology and thin-film deposition. Our commitment to excellence ensures that each product supports the highest standards in performance and reliability.

Gallium Oxide–Magnesium Oxide Sputtering Target (Ga₂O₃–MgO)

Introduction

The Gallium Oxide–Magnesium Oxide (Ga₂O₃–MgO) Sputtering Target is a composite oxide material designed for advanced thin film applications requiring excellent optical transparency, wide bandgap, and superior chemical stability. By combining gallium oxide (Ga₂O₃) and magnesium oxide (MgO), this sputtering target enables the formation of high-quality, transparent conductive or insulating films with enhanced mechanical and thermal stability. It is widely used in semiconductor, optoelectronic, and power device manufacturing.

Detailed Description

Gallium oxide is a wide-bandgap semiconductor with exceptional optical and electrical characteristics, while magnesium oxide contributes excellent hardness, high melting point, and chemical durability. The combination of these oxides in a controlled ratio results in films with improved dielectric properties, enhanced thermal stability, and tunable electrical conductivity.

The Ga₂O₃–MgO sputtering target is typically prepared through high-temperature solid-state synthesis, followed by hot pressing or vacuum sintering to achieve high density and uniform phase distribution. This process minimizes porosity and ensures stable sputtering behavior, producing thin films with excellent adhesion and uniform thickness.

Key Features:

  • High optical transparency in UV–visible–IR range.

  • Wide bandgap (>4.8 eV) suitable for power and optoelectronic devices.

  • Excellent film uniformity and low particle generation.

  • Enhanced chemical and thermal stability due to MgO addition.

  • Customizable Ga₂O₃:MgO ratios to tailor dielectric and conductivity properties.

Applications

The Ga₂O₃–MgO sputtering target is widely used in:

  • Semiconductor devices – dielectric layers and transparent conductive films.

  • Power electronics – wide-bandgap oxide layers for high-voltage components.

  • Optoelectronic coatings – UV detectors, LEDs, and laser diodes.

  • Transparent electronics – oxide-based transistors and display backplanes.

  • Research & development – functional oxide and heterostructure studies.

Technical Parameters

ParameterTypical Value / RangeImportance
Chemical Formula(Ga₂O₃)₁₋ₓ(MgO)ₓDefines composition and performance
Purity99.9% – 99.99%Ensures low contamination
Density≥ 95% theoreticalImproves film uniformity and deposition rate
Diameter25 – 300 mm (custom)Compatible with various sputtering systems
Thickness3 – 10 mmBalances sputtering stability and target lifespan
Backing PlateCopper / TitaniumEnhances heat dissipation and bonding reliability

Comparison with Related Materials

MaterialKey AdvantageTypical Application
Ga₂O₃–MgOHigh thermal stability & tunable conductivityPower & optoelectronic films
Ga₂O₃ (Gallium Oxide)Ultra-wide bandgap & transparencyUV devices, semiconductors
MgO (Magnesium Oxide)Excellent insulation & hardnessProtective coatings
ZnO–MgOTunable optical bandgapTransparent semiconductors

FAQ

QuestionAnswer
Can Ga₂O₃–MgO targets be customized?Yes, Ga₂O₃:MgO ratios, sizes, and bonding options can be customized.
What bonding options are available?Copper or titanium backing plates are common.
Is the target suitable for RF sputtering?Yes, ideal for both RF and DC magnetron sputtering systems.
How are the targets packaged?Vacuum-sealed with desiccant, foam-cushioned, and shipped in wooden crates.
Which industries use this material most?Semiconductor, optoelectronic, and power device industries.

Packaging

Each Gallium Oxide–Magnesium Oxide Sputtering Target is precisely vacuum-sealed in an inert atmosphere to prevent contamination and moisture absorption. Targets are labeled for traceability and securely packed in foam-lined, export-grade cartons or wooden boxes.

Conclusion

The Ga₂O₃–MgO sputtering target combines the superior optical and electronic properties of gallium oxide with the thermal and structural stability of magnesium oxide, offering a robust material for next-generation thin film technologies. Its wide bandgap, high purity, and customizable composition make it a preferred choice for high-performance electronic and optoelectronic coatings.

For detailed specifications and quotations, please contact us at [sales@thinfilmmaterials.com].

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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