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VD0846A Gallium(III) Sulfide Pellet Evaporation Material (Ga2S3)

MSDS File
Material TypeGallium(III) Sulfide
SymbolGa2S3
Color/Appearanceyellow
Melting Point (°C)1,090
Theoretical Density (g/cc)3.77
Z Ratio–
E-Beam–
Thermal Evaporation TechniquesBoat:  –
Crucible:  –
E-Beam Crucible Liner Material–
Temp. (°C) for Given Vap. Press. (Torr)–
Comments–

Gallium(III) Sulfide Pellet Evaporation Material

TFM offers high-purity Gallium(III) Sulfide Pellet Evaporation Material, specifically designed for thin-film deposition in semiconductor, optoelectronic, and photonic applications. Composed of gallium (Ga) and sulfur (S), this material is used to create gallium sulfide (Ga2S3) thin films, which are important in applications requiring high optical transparency, electrical conductivity, and semiconducting properties. Gallium sulfide is a wide-bandgap semiconductor, making it suitable for infrared optoelectronics, photodetectors, and solar cells.

This material is engineered for thermal evaporation and electron beam (E-beam) evaporation, providing uniform film thickness, superior purity, and high adhesion to substrates, making it ideal for use in advanced thin-film applications.

Key Features and Advantages

  • Wide Bandgap Semiconductor: Gallium(III) Sulfide provides a wide bandgap, ideal for use in infrared optoelectronic devices, photodetectors, and solar energy applications.

  • High Optical Transparency: Features high optical transparency in the infrared spectrum, enhancing its suitability for optical communication systems and light-sensitive devices.

  • Excellent Electrical Properties: Offers good electrical conductivity while maintaining semiconductor characteristics, making it useful in optoelectronic devices.

  • High Purity & Uniform Deposition: Ensures precise deposition of high-quality films, reducing defects and improving device performance.

  • Customizable Composition: TFM’s Gallium(III) Sulfide material can be tailored to meet specific needs for advanced research and industrial applications.

Applications

  • Infrared Optoelectronics: Used in infrared sensors, photodetectors, and optical communication systems, ideal for applications in night vision, thermal imaging, and security systems.

  • Semiconductor Devices: Plays a key role in semiconductor technologies, such as transistors, photodetectors, and diodes.

  • Solar Cells: Contributes to the development of high-efficiency photovoltaic devices, improving light absorption and photoelectric conversion.

  • Thin-Film Coatings: Suitable for optical coatings in optoelectronics and photonic systems, offering high transparency and superior material stability.

  • High-Power Electronics: Supports high-power optoelectronic devices that require low loss and high efficiency.

Industry Impact and Customization

TFM’s Gallium(III) Sulfide Pellet Evaporation Material is essential for the development of infrared optoelectronics, semiconductor devices, and solar technologies. By providing customizable compositions, high purity, and precise deposition control, TFM ensures that its material solutions meet the requirements of advanced research and industrial applications.

With its wide-bandgap semiconductor properties, excellent optical transparency, and reliable performance, TFM’s Gallium(III) Sulfide Pellet Evaporation Material plays a significant role in the development of next-generation optoelectronic devices, photodetectors, and solar cells, ensuring high efficiency, long-term stability, and outstanding performance.

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FAQ

  • They are high‐purity substances (e.g. metals, alloys, or compounds) used in thermal or electron‐beam evaporation processes to form thin films on substrates.

  • Typically, they’re processed into a form (often ingots, pellets, or wires) that can be efficiently vaporized. Preparation emphasizes high purity and controlled composition to ensure film quality.

  • Thermal evaporation and electron-beam (e-beam) evaporation are the two main techniques, where material is heated (or bombarded with electrons) until it vaporizes and then condenses on the substrate.

  • Thermal evaporation heats the material directly (often using a resistive heater), while e-beam evaporation uses a focused electron beam to locally heat and vaporize the source material—each method offering different control and energy efficiency.

  • Key parameters include source temperature, vacuum level, deposition rate, substrate temperature, and the distance between the source and the substrate. These factors influence film uniformity, adhesion, and microstructure.

  • Evaporation generally produces high-purity films with excellent control over thickness, and it is especially suitable for materials with relatively low melting points or high vapor pressures.

  • Challenges include issues with step coverage (due to line-of-sight deposition), shadowing effects on complex topographies, and possible re-evaporation of material from the substrate if temperature isn’t properly controlled.

  • Common evaporation materials include noble metals (e.g., gold, silver), semiconductors (e.g., silicon, germanium), metal oxides, and organic compounds—each chosen for its specific optical, electrical, or mechanical properties.

  • Selection depends on desired film properties (conductivity, optical transparency, adhesion), compatibility with the evaporation process, and the final device application (semiconductor, optical coating, etc.).

  • Optimizing substrate temperature, deposition rate, and chamber vacuum are critical for ensuring that the film adheres well and forms the intended microstructure without defects.

  • Troubleshooting may involve checking the source material’s purity, ensuring stable source temperature, verifying the vacuum level, adjusting the substrate’s position or temperature, and monitoring deposition rate fluctuations.

While evaporation tends to yield very high purity films with excellent thickness control, it is limited by its line-of-sight nature. In contrast, sputtering can deposit films more uniformly on complex surfaces and is more versatile for a broader range of materials.

 

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