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Germanium Antimony Selenium Tellurium Sputtering Target

Germanium Antimony Selenium Tellurium Sputtering Target, GeSbSeTe

Chemical FormulaGeSbSeTe
Catalog No.TFM-SPT-0223
CAS Number–
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Germanium-Antimony-Selenium-Tellurium (GeSbSeTe) sputtering targets from TFM are renowned for their superior purity and competitive pricing. Drawing on our extensive expertise in materials science, we guarantee exceptional performance and reliability, thanks to our rigorous craftsmanship and attention to detail in target production.

Product Overview

Germanium Antimony Selenium Tellurium Sputtering Target (GeSbSeTe) is a composition-specific sputtering target for thin-film deposition and PVD process development. The practical specification normally includes chemistry, purity, dimensions, density, target configuration, and any bonding or backing requirement needed by the sputtering cathode.

Material and Deposition Characteristics

Power mode and process conditions should be selected according to the target conductivity, thermal behavior, and the requirements of the cathode system. For less common materials, conservative initial power density and film-composition verification are good practice.

Technical Data

ParameterTypical Value / RangeImportance
MaterialGe–Sb–Se–Te alloyDefines phase-change & optical behavior
Purity99.9% – 99.99%Minimizes defect-induced variability
CompositionCustom Ge/Sb/Se/Te ratiosTunes switching & thermal properties
Diameter1″ – 4″ (custom available)Fits standard sputtering cathodes
Thickness3 – 6 mmDetermines target lifetime
DensityHigh, alloy-controlledEnsures stable sputtering rate
Backing PlateOptional Cu (bonded)Improves heat dissipation
MaterialKey AdvantageTypical Application
Ge–Sb–Se–TeImproved thermal stability, tunable switchingPCM, photonics
Ge–Sb–Te (GST)Mature PCM materialData storage
Ge–SeWide bandgap chalcogenideOptical films
Sb–TeFast phase changeMemory research
QuestionAnswer
Can the alloy composition be customized?Yes, Ge/Sb/Se/Te ratios can be tailored to your application.
Is the target suitable for DC sputtering?Yes, most compositions are compatible with DC magnetron sputtering.
Are bonded targets available?Yes, indium-bonded or elastomer-bonded options are available.
What applications use GSTSe films most?Phase-change memory, optical switching, and IR thin-film research.

Typical Thin-Film Applications

  • Thin-film research and materials-development projects requiring a composition-specific sputtering source
  • Semiconductor, optical, energy, electronic, or laboratory coatings depending on the material system
  • Custom R&D work where target composition, purity, and geometry need to be specified together

Target Configuration and Ordering Considerations

For quotation and manufacturability review, provide target size, thickness, purity or alloy composition, quantity, and the sputtering gun or cathode model if known. If a bonded assembly is required, include backing-plate material, bonding preference, and any dimensional tolerances, surface-finish needs, or inspection-document requirements. TFM can also review customer drawings or old-target samples for replacement builds.

Frequently Asked Questions

What is the main reason to use a Germanium Antimony Selenium Tellurium sputtering target?

It provides a composition-specific source for thin-film deposition when the target material itself is important to the desired film chemistry or process.

How should the sputtering mode for Germanium Antimony Selenium Tellurium be selected?

The power mode should be chosen according to target conductivity, thermal behavior, and equipment capability. Less-conductive materials are commonly evaluated with RF power.

Why are density and microstructure important for Germanium Antimony Selenium Tellurium targets?

These factors can influence erosion stability, thermal behavior, particle generation, and the risk of cracking or local hot spots.

Can Germanium Antimony Selenium Tellurium be supplied with a backing plate?

Yes. If the material is brittle or the cathode requires it, a bonded configuration can be reviewed according to target size, thickness, cooling, and power.

Does target composition always equal film composition?

No. Film chemistry may differ because of sputtering yields, process conditions, substrate temperature, re-sputtering, and chamber history. Film verification is recommended when composition matters.

What should I provide to request a quotation for Germanium Antimony Selenium Tellurium?

Please provide the composition, purity, dimensions, quantity, target configuration, cathode details, and any drawing or inspection requirements.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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