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ST0261 Hafnium Silicide Sputtering Target, HfSi2

Chemical Formula: HfSi2
Catalog Number: ST0261
CAS Number: 12401-56-8
Purity: >99.5%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

 hafnium silicide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Hafnium Silicide Sputtering Target Description

The hafnium silicide sputtering target is a specialized silicide ceramic target composed of hafnium and silicon. It is used in various thin film deposition applications, including semiconductor, display, LED, and photovoltaic device fabrication, as well as in functional coatings and other advanced material processes.

Hafnium

Hafnium is a chemical element that originated from Copenhagen, Denmark, with the Latin name “Hania.” It was first mentioned in 1911 by Georges Urbain and Vladimir Vernadsky. The element was later isolated and announced by Dirk Coster and George de Hevesy. The canonical chemical symbol for hafnium is “Hf,” and it has an atomic number of 72. Hafnium is located in Period 6, Group 4 of the periodic table, belonging to the d-block. Its relative atomic mass is 178.49(2) Dalton, with the number in brackets indicating the uncertainty.

Related Product: Hafnium Sputtering Target

Silicon

Silicon is a chemical element derived from the Latin silex or silicis, meaning flint. It was first identified in 1824 by Jöns Jakob Berzelius. The element was later isolated and announced by Berzelius himself. The canonical chemical symbol for silicon is “Si,” and it has an atomic number of 14. Silicon is located in Period 3, Group 14 of the periodic table, and belongs to the p-block. Its relative atomic mass is 28.0855(3) Dalton, with the number in brackets indicating the uncertainty.

Hafnium Silicide Sputtering Target Application

The hafnium silicide sputtering target is utilized in various applications including thin film deposition, decoration, semiconductor manufacturing, display technologies, LED and photovoltaic devices, and functional coatings. It is also used in optical information storage, glass coating industries such as car glass and architectural glass, as well as optical communication.

Hafnium Silicide Sputtering Target Packing

Our hafnium silicide sputter targets are meticulously tagged and labeled externally to ensure efficient identification and stringent quality control. We take great care to prevent any damage that might occur during storage or transportation.

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TFM offers hafnium silicide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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