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ST0021A Indium Antimony Sputtering Targets

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Indium Antimony Sputtering Targets

Overview

Indium Antimony Sputtering Targets are high-quality materials composed of indium and antimony, ideal for thin-film deposition processes such as semiconductor manufacturing, CVD, and PVD. These targets provide excellent performance and reliability for advanced applications requiring high-purity alloys.

Specifications

  • Purity: 99.9%
  • Circular Targets: Diameter ≤ 14 inches, Thickness ≥ 1mm
  • Block Targets: Length ≤ 32 inches, Width ≤ 12 inches, Thickness ≥ 1mm

Applications

  • Semiconductor Manufacturing
  • Chemical Vapor Deposition (CVD)
  • Physical Vapor Deposition (PVD)

Key Features

  • Competitive Pricing: Affordable, high-performance sputtering targets.
  • High Purity: 99.9% purity ensures superior thin-film deposition results.
  • Grain Refinement: Engineered microstructure for improved material properties.
  • Semiconductor Grade: Meets the highest standards for semiconductor applications.

Manufacturing Process

  • Refining: Achieved through a three-layer electrolytic process for optimal purity.
  • Melting and Casting: Semi-continuous casting with an electrical resistance furnace.
  • Grain Refinement: Thermomechanical treatment to enhance material properties.
  • Cleaning and Packaging: Thorough cleaning for vacuum applications, with protection during shipment to avoid environmental contamination.

Available Options

  • Purity: 99.9% minimum purity.
  • Smaller Sizes: Available for research and development applications.
  • Sputtering Target Bonding: Custom bonding services available.

For more details or to inquire about Indium Antimony Sputtering Targets, please contact us today.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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