Thin Film Materials Logo
Generic selectors
Exact matches only
Search in title
Search in content
Post Type Selectors
Indium Gallium Zinc Oxide IGZO Evaporation Materials

Indium Gallium Zinc Oxide IGZO Evaporation Materials

Material: Indium Gallium Zinc Oxide (InGaZnOx)
Catalog No.: TFM-EVM-0144
Purity: 99.9% ~ 99.99%
Shape: Powder/ Granule/ Custom-made

Indium Gallium Zinc Oxide (InGaZnOx) evaporation material is supplied by Thin Film Materials (TFM) for vacuum evaporation and thin-film deposition. Available form, size, purity, and packaging can be customized to suit research and production requirements.

MSDS File

Product Overview

Indium Gallium Zinc Oxide IGZO Evaporation Materials is a conductive-oxide evaporation source used in transparent or semiconducting functional-film research. For oxide evaporation, the source can experience oxygen loss or composition change during heating, so the deposited film may not exactly reproduce the bulk source composition. Electron-beam evaporation, controlled oxygen background, source conditioning, and post-deposition treatment are among the process variables commonly evaluated when optimizing electrical and optical performance.

Evaporation Behavior and Process Considerations

Electron-beam evaporation is frequently evaluated for ceramic oxides because many have high melting temperatures. During heating, oxygen can be lost or the source can partially dissociate, so oxygen partial pressure, substrate temperature, deposition rate, and any post-deposition anneal may need optimization. The source should be conditioned gradually to minimize cracking, spitting, and sudden outgassing.

Technical Data

Material TypeIndium Gallium Zinc Oxide
SymbolIGZO
Color/AppearanceWhite Solid
Melting Point850 °C
Theoretical Density 6.5 g/cm3
Purity99.5% ~ 99.99%
ShapePowder/ Granule/ Custom-made

Typical Thin-Film Applications

  • Optical, dielectric, transparent conductive, magnetic, protective, or functional oxide films
  • Displays, photovoltaics, sensors, semiconductors, and multilayer optical coatings where applicable
  • Research on composition, oxygen content, phase, and post-deposition treatment

Source Form and Ordering Considerations

For quotation, provide the material or formula, purity, desired source form and size, quantity, evaporation method if known, and any crucible, boat, or e-beam hearth constraints. For compound materials, include the target film composition or application when possible so that source form and process risk can be reviewed together. TFM can supply pellets, pieces, granules, tablets, or other custom forms subject to material manufacturability.

Frequently Asked Questions

Is Indium Gallium Zinc Oxide IGZO commonly evaporated by electron beam?

Electron-beam evaporation is frequently evaluated for high-melting ceramic oxides because it can provide localized heating. The exact method depends on the oxide, source form, and required film properties.

Can Indium Gallium Zinc Oxide IGZO lose oxygen during evaporation?

Yes. Some oxides can partially dissociate or become oxygen-deficient under vacuum heating. Oxygen partial pressure, substrate temperature, deposition rate, and post-annealing can influence the final film composition.

Why can oxide evaporation sources spit or crack?

Rapid heating, trapped gas, porosity, and thermal gradients can cause cracking or particle ejection. A gradual conditioning ramp and stable source geometry help reduce these effects.

Does the deposited film always match the composition of Indium Gallium Zinc Oxide IGZO?

Not always. Preferential evaporation, oxygen loss, decomposition, and substrate conditions can shift film chemistry or phase relative to the source material.

What source form is suitable for Indium Gallium Zinc Oxide IGZO?

Pellets, tablets, pieces, or granules may be used depending on the e-beam pocket or crucible. A dense and mechanically stable source form is usually easier to condition reproducibly.

What information should I provide for a Indium Gallium Zinc Oxide IGZO quotation?

Provide formula or composition, purity, source form and size, quantity, evaporation method, source-holder dimensions, and any film-composition or documentation requirements.

Reviews

There are no reviews yet.

Be the first to review “Indium Gallium Zinc Oxide IGZO Evaporation Materials”

Your email address will not be published. Required fields are marked *

Related Products

Related products

FAQ

  • They are high‐purity substances (e.g. metals, alloys, or compounds) used in thermal or electron‐beam evaporation processes to form thin films on substrates.

  • Typically, they’re processed into a form (often ingots, pellets, or wires) that can be efficiently vaporized. Preparation emphasizes high purity and controlled composition to ensure film quality.

  • Thermal evaporation and electron-beam (e-beam) evaporation are the two main techniques, where material is heated (or bombarded with electrons) until it vaporizes and then condenses on the substrate.

  • Thermal evaporation heats the material directly (often using a resistive heater), while e-beam evaporation uses a focused electron beam to locally heat and vaporize the source material—each method offering different control and energy efficiency.

  • Key parameters include source temperature, vacuum level, deposition rate, substrate temperature, and the distance between the source and the substrate. These factors influence film uniformity, adhesion, and microstructure.

  • Evaporation generally produces high-purity films with excellent control over thickness, and it is especially suitable for materials with relatively low melting points or high vapor pressures.

  • Challenges include issues with step coverage (due to line-of-sight deposition), shadowing effects on complex topographies, and possible re-evaporation of material from the substrate if temperature isn’t properly controlled.

  • Common evaporation materials include noble metals (e.g., gold, silver), semiconductors (e.g., silicon, germanium), metal oxides, and organic compounds—each chosen for its specific optical, electrical, or mechanical properties.

  • Selection depends on desired film properties (conductivity, optical transparency, adhesion), compatibility with the evaporation process, and the final device application (semiconductor, optical coating, etc.).

  • Optimizing substrate temperature, deposition rate, and chamber vacuum are critical for ensuring that the film adheres well and forms the intended microstructure without defects.

  • Troubleshooting may involve checking the source material’s purity, ensuring stable source temperature, verifying the vacuum level, adjusting the substrate’s position or temperature, and monitoring deposition rate fluctuations.

While evaporation tends to yield very high purity films with excellent thickness control, it is limited by its line-of-sight nature. In contrast, sputtering can deposit films more uniformly on complex surfaces and is more versatile for a broader range of materials.

 

Shopping Cart
Scroll to Top