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IGZO Target made by TFM

Indium Gallium Zinc Oxide IGZO Sputtering Target

Chemical Formula: InGaZnOx
Catalog Number: TFM-SPT-0261
CAS Number: 151248-91-8
Purity: 99.9%, 99.95%, 99.99%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

 Indium Gallium Zinc Oxide (IGZO) Sputtering Targets  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

CoA_IGZO

 

Product Overview

Indium Gallium Zinc Oxide IGZO Sputtering Target is a conductive-oxide sputtering target used to deposit transparent or semiconducting functional thin films. In this material family, target density, dopant level, resistivity, sputtering mode, oxygen partial pressure, and substrate temperature can all influence the balance between film conductivity, optical transmission, composition, and microstructure.



Material and Deposition Characteristics

Conductive-oxide sputtering is strongly affected by target density, resistivity, dopant content, power density, working pressure, oxygen content, substrate temperature, and film thickness. RF magnetron sputtering is broadly applicable to ceramic targets, while sufficiently conductive grades may also be compatible with DC or pulsed-DC systems depending on equipment design. The process window should ultimately be tuned against measured film electrical and optical performance.

Technical Data

Material TypeIndium Gallium Zinc Oxide
SymbolIGZO
Color/AppearanceWhite, Crystalline Solid
Melting Point850 °C
Theoretical Density 6.5 g/cm3
Type of BondIndium
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

Typical Thin-Film Applications

  • Transparent conductive oxide coatings for displays, photovoltaics, smart windows, sensors, and optoelectronics
  • Thin-film electronics and transparent electrode development
  • Projects balancing optical transmission, conductivity, and process compatibility

Target Configuration and Ordering Considerations

When requesting a quotation, provide target diameter or rectangular dimensions, thickness, purity or composition, required quantity, and whether a backing plate or bonded assembly is needed. For brittle ceramic or compound targets, it is useful to specify the cathode model, backing-plate material, preferred bonding method, operating power if known, and any density, tolerance, or inspection-document requirements. TFM can review drawings, old-target photos, and application details when custom dimensions are required.

Frequently Asked Questions

What are Indium Gallium Zinc Oxide IGZO sputtering targets used for?

They are used to deposit transparent conductive or semiconducting oxide films for displays, photovoltaics, smart windows, sensors, and other thin-film electronic or optoelectronic applications.

Can Indium Gallium Zinc Oxide IGZO targets be sputtered with RF or DC power?

RF sputtering is widely applicable to ceramic conductive-oxide targets. Depending on target resistivity and equipment capability, some grades may also be compatible with DC or pulsed-DC operation.

Why is target density important for Indium Gallium Zinc Oxide IGZO?

Higher and more uniform density generally supports more stable erosion and can reduce pores, particles, local hot spots, and arc-related problems. Density should be considered together with microstructure and bonding quality.

How do oxygen partial pressure and power affect Indium Gallium Zinc Oxide IGZO films?

These parameters can influence film composition, carrier concentration, resistivity, transparency, and microstructure. The process window should therefore be optimized against the actual film-performance targets.

Can the dopant level or composition of Indium Gallium Zinc Oxide IGZO be customized?

Yes. The required composition should be stated clearly in the RFQ so that the target formulation and any acceptance criteria can be agreed before production.

What information should I provide to request a Indium Gallium Zinc Oxide IGZO target quotation?

Please provide composition, purity basis, dimensions, quantity, planar or rotary format, backing requirement, cathode model if known, and any density, resistivity, optical, or documentation requirements.

Order Now

InGaZnO4 target 3N ø2"*6mm, Multi Phase, IGZO target 4N In2O3/Ga2O3/ZnO 1/1/1 at% ø50.8×3 mm with 2 mm Cu B/Plate, IGZO target 4N 2"×3 mm In bonded Cu BP 3 mm, IGZO Target 1:1:1 4N Ø3"×3 mm Elastomer Bonded to 3 mm Cu BP

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

Manufacturing routes depend on the material and target specification. Metal targets may be cast and machined, while some ceramic targets are consolidated by sintering. Ask for the product-specific route and inspection criteria when these affect qualification.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Bonding may be selected for brittle targets, thinner precious-metal targets, or a cathode that needs a specific backing and cooling arrangement. It is not a universal requirement. Provide target and backing dimensions, the cathode model, and operating conditions for assembly review.

 

DC is commonly used with conductive targets. RF is often used for poorly conducting or insulating targets to mitigate surface charging; other power modes may be suitable depending on the target, cathode, and process. Confirm the mode against the equipment and material.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Customer-supplied powder acceptance is not assumed. Provide material identity, lot traceability, composition and impurity analysis, quantity, and handling constraints in the RFQ. TFM must confirm feasibility and acceptance criteria before any material is sent.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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