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In2S3 Target made by TFM

Indium Sulfide Sputtering Target, In2S3

Chemical Formula: In2S3
Catalog Number: TFM-SPT-0267
CAS Number: 12030-24-9
Purity: 99.9%, 99.95%, 99.99%, 99.995%, 99.999%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Indium Sulfide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Product Overview

Indium Sulfide Sputtering Target (In2S3) is a chalcogenide sputtering target intended for composition-sensitive thin-film deposition. For sulfur-, selenium-, or tellurium-containing materials, the target chemistry is only the starting point: sputtering yield differences, substrate temperature, gas pressure, and volatile-component loss can shift the deposited-film composition relative to the nominal target composition.


Indium
Sulfur

Material and Deposition Characteristics

These targets are commonly treated as mechanically brittle and composition-sensitive sputtering materials. RF sputtering is often considered when target conductivity is limited. Power density, substrate temperature, and working pressure should be controlled conservatively, and the deposited film composition should be verified when precise sulfur, selenium, or tellurium stoichiometry is required.

Technical Data

Compound FormulaIn2S3
AppearanceSolid
Melting Point1,050° C
Density4.90 g/cm3
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

Typical Thin-Film Applications

  • Chalcogenide thin films for optical, infrared, electronic, thermoelectric, and phase-change research
  • Compound semiconductor layers and advanced-material thin-film studies
  • Projects where composition retention and controlled sputtering of brittle materials are important

Target Configuration and Ordering Considerations

When requesting a quotation, provide target diameter or rectangular dimensions, thickness, purity or composition, required quantity, and whether a backing plate or bonded assembly is needed. For brittle ceramic or compound targets, it is useful to specify the cathode model, backing-plate material, preferred bonding method, operating power if known, and any density, tolerance, or inspection-document requirements. TFM can review drawings, old-target photos, and application details when custom dimensions are required.

Frequently Asked Questions

What sputtering mode is commonly used for Indium Sulfide?

RF magnetron sputtering is often considered when the target conductivity is limited or when more conservative operation is preferred for brittle, composition-sensitive compounds.

Can Indium Sulfide films lose sulfur, selenium, or tellurium during deposition?

Yes. Composition drift can occur because of preferential sputtering, substrate heating, re-sputtering, and volatile-component loss. Film composition should be checked when stoichiometry is important.

Why is bonding important for a Indium Sulfide target?

Many chalcogenide targets are brittle and have modest thermal conductivity. A suitable backing plate and bonding layer can improve mechanical support and heat transfer during sputtering.

Does the target composition guarantee film stoichiometry for In2S3?

No. The target composition is the starting source composition, but the deposited film can still shift because of process variables. Film analysis should be used to confirm the final stoichiometry.

What process variables should be monitored when sputtering Indium Sulfide?

Useful variables include power density, working pressure, substrate temperature, cooling, target conditioning, and deposited-film composition. If reactive gas is used, gas ratio should also be controlled carefully.

What should I send TFM for a custom Indium Sulfide target?

Please provide composition or formula, purity, dimensions, quantity, backing or bonding details, cathode model, and any film-composition or inspection requirements relevant to your project.

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In₂S₃ Target 3N ø76.2*3.175mm Indium Bonded 3mm Cu B/Plate

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

Manufacturing routes depend on the material and target specification. Metal targets may be cast and machined, while some ceramic targets are consolidated by sintering. Ask for the product-specific route and inspection criteria when these affect qualification.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Bonding may be selected for brittle targets, thinner precious-metal targets, or a cathode that needs a specific backing and cooling arrangement. It is not a universal requirement. Provide target and backing dimensions, the cathode model, and operating conditions for assembly review.

 

DC is commonly used with conductive targets. RF is often used for poorly conducting or insulating targets to mitigate surface charging; other power modes may be suitable depending on the target, cathode, and process. Confirm the mode against the equipment and material.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Customer-supplied powder acceptance is not assumed. Provide material identity, lot traceability, composition and impurity analysis, quantity, and handling constraints in the RFQ. TFM must confirm feasibility and acceptance criteria before any material is sent.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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