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Indium Tin Oxide Sputtering Target, ITO Target

Catalog No.: TFM-SPT-0271
Material: Indium Tin Oxide, ITO
Purity: >=99.99%
CAS Number: 50926-11-9
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Indium Tin Oxide (ITO) sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

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Product Overview

Indium Tin Oxide Sputtering Target (ITO Target) is a conductive-oxide sputtering target used to deposit transparent or semiconducting functional thin films. In this material family, target density, dopant level, resistivity, sputtering mode, oxygen partial pressure, and substrate temperature can all influence the balance between film conductivity, optical transmission, composition, and microstructure.

Material and Deposition Characteristics

Conductive-oxide sputtering is strongly affected by target density, resistivity, dopant content, power density, working pressure, oxygen content, substrate temperature, and film thickness. RF magnetron sputtering is broadly applicable to ceramic targets, while sufficiently conductive grades may also be compatible with DC or pulsed-DC systems depending on equipment design. The process window should ultimately be tuned against measured film electrical and optical performance.

Technical Data

ParameterTypical Value / RangeImportance
Chemical Formula(In₂O₃)₁₋ₓ(SnO₂)ₓDefines transparency and conductivity
Composition RatioIn₂O₃:SnO₂ = 90:10 wt%Industry standard for TCO films
Purity99.9% – 99.99%Ensures low defect density
Density≥ 7.0 g/cm³Improves sputtering efficiency
Resistivity (film)10⁻⁴ – 10⁻³ Ω·cmProvides excellent conductivity
Diameter25 – 300 mm (custom)Fits various sputtering systems
Thickness3 – 10 mmBalances sputtering lifetime and uniformity
Backing PlateCopper / TitaniumImproves heat dissipation
MaterialKey AdvantageTypical Application
Indium Tin Oxide (ITO)Excellent transparency & conductivityDisplays, photovoltaics
Aluminum Zinc Oxide (AZO)Cost-effective TCO alternativeSolar cells
Fluorine-doped Tin Oxide (FTO)High thermal durabilityArchitectural glass
Indium Zinc Oxide (IZO)Enhanced flexibility & low-temp sputteringFlexible displays
QuestionAnswer
Can the In₂O₃:SnO₂ ratio be customized?Yes, ratios like 95:5 or 80:20 wt% are available upon request.
What sputtering systems is ITO compatible with?Works with both DC and RF magnetron sputtering systems.
How is the target bonded?Typically with copper or titanium backplates for heat management.
What’s the typical film transparency?Over 85% in the visible range.
How are the targets packaged?Vacuum-sealed, foam-cushioned, and packed in export-grade crates.

Typical Thin-Film Applications

  • Transparent conductive oxide coatings for displays, photovoltaics, smart windows, sensors, and optoelectronics
  • Thin-film electronics and transparent electrode development
  • Projects balancing optical transmission, conductivity, and process compatibility

Target Configuration and Ordering Considerations

When requesting a quotation, provide target diameter or rectangular dimensions, thickness, purity or composition, required quantity, and whether a backing plate or bonded assembly is needed. For brittle ceramic or compound targets, it is useful to specify the cathode model, backing-plate material, preferred bonding method, operating power if known, and any density, tolerance, or inspection-document requirements. TFM can review drawings, old-target photos, and application details when custom dimensions are required.

Frequently Asked Questions

What are Indium Tin Oxide sputtering targets used for?

They are used to deposit transparent conductive or semiconducting oxide films for displays, photovoltaics, smart windows, sensors, and other thin-film electronic or optoelectronic applications.

Can Indium Tin Oxide targets be sputtered with RF or DC power?

RF sputtering is widely applicable to ceramic conductive-oxide targets. Depending on target resistivity and equipment capability, some grades may also be compatible with DC or pulsed-DC operation.

Why is target density important for Indium Tin Oxide?

Higher and more uniform density generally supports more stable erosion and can reduce pores, particles, local hot spots, and arc-related problems. Density should be considered together with microstructure and bonding quality.

How do oxygen partial pressure and power affect Indium Tin Oxide films?

These parameters can influence film composition, carrier concentration, resistivity, transparency, and microstructure. The process window should therefore be optimized against the actual film-performance targets.

Can the dopant level or composition of Indium Tin Oxide be customized?

Yes. The required composition should be stated clearly in the RFQ so that the target formulation and any acceptance criteria can be agreed before production.

What information should I provide to request a Indium Tin Oxide target quotation?

Please provide composition, purity basis, dimensions, quantity, planar or rotary format, backing requirement, cathode model if known, and any density, resistivity, optical, or documentation requirements.

Order Now

Ø1/16" × 1/16", ITO (In₂O₃/SnO₂ = 90/10 at%), Bonded, Ø1" × 3.18 mm, ITO (In₂O₃/SnO₂ = 90/10 wt%), 4N, Ø2" × 3 mm, ITO (In₂O₃/SnO₂ = 90/10 wt%), 4N, 3 mm Cu B/P, Ø2" × 3.18 mm, ITO (In₂O₃/SnO₂ = 90/10 wt%), 4N, Ø2" × 4 mm, ITO (In₂O₃/SnO₂ = 90/10 wt%), 4N, 2 mm Cu B/P (<6.35 mm Total), Ø2" × 6.35 mm, ITO (In₂O₃/SnO₂ = 90/10 wt%), 4N, Ø3" × 3.18 mm, ITO (In₂O₃/SnO₂ = 90/10 wt%), 4N, Ø3" × 6.35 mm, ITO (In₂O₃/SnO₂ = 90/10 wt%), 4N, Ø4" × 3.18 mm, ITO (In₂O₃/SnO₂ = 90/10 wt%), 4N, Ø4" × 6.35 mm, ITO (In₂O₃/SnO₂ = 90/10 wt%), 4N, Ø150 mm × 10 mm, ITO (In₂O₃/SnO₂ = 90/10 wt%), 4N, Cu B/P (ø180×5 mm, 8×ø7 mm holes, PCD 163 mm), 150 × 50 × 3 mm, ITO (In₂O₃/SnO₂ = 90/10 wt%), 4N, 3 mm Cu B/P

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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