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Indium Tin Oxide Sputtering Target, ITO Target

Catalog No.: TFM-SPT-0271
Material: Indium Tin Oxide, ITO
Purity: >=99.99%
CAS Number: 50926-11-9
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Indium Tin Oxide (ITO) sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

COA_ITO_TRGPdf

What is an ITO sputtering target?

An indium tin oxide (ITO) sputtering target is an In2O3/SnO2 conductive-oxide source used to deposit transparent conductive or semiconducting thin films by sputtering. A common purchasing reference is 90:10 wt% In2O3:SnO2; the required ratio, composition basis, purity basis, geometry, and acceptance criteria should be stated in the quotation or approved specification. Film conductivity and optical transmission must be verified on the intended deposition process rather than inferred from the target alone.

Material and Deposition Characteristics

Conductive-oxide sputtering is strongly affected by target density, resistivity, dopant content, power density, working pressure, oxygen content, substrate temperature, and film thickness. RF magnetron sputtering is broadly applicable to ceramic targets, while sufficiently conductive grades may also be compatible with DC or pulsed-DC systems depending on equipment design. The process window should ultimately be tuned against measured film electrical and optical performance.

ITO target selection data

Selection fieldWhat to specifyWhy it matters
Material identityIndium tin oxide; state the In2O3:SnO2 ratioSeparates the requested target chemistry from other transparent conductive oxides
Composition basisState whether the ratio is wt%, mol%, or another defined basisPrevents ambiguity when comparing drawings, quotations, and lot documents
Target formatPlanar or rotary, with cathode model or drawing when availableConnects the material requirement to the actual source geometry
AssemblyUnbonded target or bonded assembly; include backing and interface requirementsAllows geometry and thermal-management requirements to be reviewed together
Inspection and documentsList required dimensional, composition, density, electrical, visual, or lot-document checksKeeps requested evidence distinct from unverified catalog assumptions
Film acceptanceDefine the electrical, optical, composition, thickness, or other film measurements used by the projectThe deposited film depends on the target and the complete process window

The downloadable Typical Specification below is a planning reference for RFQ discussion. It is not a batch CoA, a measured lot result, or a guaranteed acceptance limit.

ITO or another transparent conductive oxide?

Use the required film function, deposition system, substrate limits, process-development plan, and acceptance measurements to decide whether ITO or another transparent conductive oxide should be evaluated. The ITO thin-film composition and sputtering guide explains the film/process variables; this product page remains the commercial owner for planar ITO target selection and RFQ intent.

Typical Thin-Film Applications

  • Transparent conductive oxide coatings for displays, photovoltaics, smart windows, sensors, and optoelectronics
  • Thin-film electronics and transparent electrode development
  • Projects balancing optical transmission, conductivity, and process compatibility

Target Configuration and Ordering Considerations

For an ITO target quotation, provide the In2O3:SnO2 ratio and composition basis, requested purity basis, target diameter or rectangular dimensions, thickness, quantity, and planar or rotary format. If an assembly is required, include the cathode model or drawing, backing material, bonding or interface requirement, cooling and operating context if known, and the inspection or lot documents required for acceptance. Send the available target drawing and requirements to TFM for review; unlisted values remain subject to quotation and approved specification.

Related paths: browse the Sputtering Targets catalog for material discovery, or review thin-film application categories before defining the RFQ.

Frequently Asked Questions

What are Indium Tin Oxide sputtering targets used for?

They are used to deposit transparent conductive or semiconducting oxide films for displays, photovoltaics, smart windows, sensors, and other thin-film electronic or optoelectronic applications.

Can Indium Tin Oxide targets be sputtered with RF or DC power?

RF sputtering is widely applicable to ceramic conductive-oxide targets. Depending on target resistivity and equipment capability, some grades may also be compatible with DC or pulsed-DC operation.

Why is target density important for Indium Tin Oxide?

Higher and more uniform density generally supports more stable erosion and can reduce pores, particles, local hot spots, and arc-related problems. Density should be considered together with microstructure and bonding quality.

How do oxygen partial pressure and power affect Indium Tin Oxide films?

These parameters can influence film composition, carrier concentration, resistivity, transparency, and microstructure. The process window should therefore be optimized against the actual film-performance targets.

Can the dopant level or composition of Indium Tin Oxide be customized?

Yes. The required composition should be stated clearly in the RFQ so that the target formulation and any acceptance criteria can be agreed before production.

What information should I provide to request an Indium Tin Oxide target quotation?

Please provide composition, purity basis, dimensions, quantity, planar or rotary format, backing requirement, cathode model if known, and any density, resistivity, optical, or documentation requirements.

Typical specification reference: Download the Indium Tin Oxide Sputtering Target Typical Specification Sheet (PDF). Illustrative planning values for preliminary RFQ discussion; not a batch CoA or guaranteed acceptance limit. Order-specific requirements and actual batch documentation govern.

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Ø1/16" × 1/16", ITO (In₂O₃/SnO₂ = 90/10 at%), Bonded, Ø1" × 3.18 mm, ITO (In₂O₃/SnO₂ = 90/10 wt%), 4N, Ø2" × 3 mm, ITO (In₂O₃/SnO₂ = 90/10 wt%), 4N, 3 mm Cu B/P, Ø2" × 3.18 mm, ITO (In₂O₃/SnO₂ = 90/10 wt%), 4N, Ø2" × 4 mm, ITO (In₂O₃/SnO₂ = 90/10 wt%), 4N, 2 mm Cu B/P (<6.35 mm Total), Ø2" × 6.35 mm, ITO (In₂O₃/SnO₂ = 90/10 wt%), 4N, Ø3" × 3.18 mm, ITO (In₂O₃/SnO₂ = 90/10 wt%), 4N, Ø3" × 6.35 mm, ITO (In₂O₃/SnO₂ = 90/10 wt%), 4N, Ø4" × 3.18 mm, ITO (In₂O₃/SnO₂ = 90/10 wt%), 4N, Ø4" × 6.35 mm, ITO (In₂O₃/SnO₂ = 90/10 wt%), 4N, Ø150 mm × 10 mm, ITO (In₂O₃/SnO₂ = 90/10 wt%), 4N, Cu B/P (ø180×5 mm, 8×ø7 mm holes, PCD 163 mm), 150 × 50 × 3 mm, ITO (In₂O₃/SnO₂ = 90/10 wt%), 4N, 3 mm Cu B/P

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

Manufacturing routes depend on the material and target specification. Metal targets may be cast and machined, while some ceramic targets are consolidated by sintering. Ask for the product-specific route and inspection criteria when these affect qualification.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Bonding may be selected for brittle targets, thinner precious-metal targets, or a cathode that needs a specific backing and cooling arrangement. It is not a universal requirement. Provide target and backing dimensions, the cathode model, and operating conditions for assembly review.

 

DC is commonly used with conductive targets. RF is often used for poorly conducting or insulating targets to mitigate surface charging; other power modes may be suitable depending on the target, cathode, and process. Confirm the mode against the equipment and material.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Customer-supplied powder acceptance is not assumed. Provide material identity, lot traceability, composition and impurity analysis, quantity, and handling constraints in the RFQ. TFM must confirm feasibility and acceptance criteria before any material is sent.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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