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ST0154 Indium Tin Oxide Sputtering Target, In2O3/SnO2

Chemical Formula: In2O3/SnO2
Catalog Number: ST0154
CAS Number: 50926-11-9
Purity: 99.9%, 99.95%, 99.99%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Tin Oxide (ITO) sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Indium Tin Oxide Sputtering Target Description

The Indium Tin Oxide Sputtering Target from TFM is an oxide sputtering material composed of indium (In), tin (Sn), and oxygen (O).

IndiumIndium is a chemical element named after the Latin word ‘indicium,’ meaning violet or indigo. It was first mentioned in 1863 and observed by F. Reich and T. Richter, with the isolation later accomplished and announced by T. Richter. The chemical symbol for indium is “In,” and its atomic number is 49. Indium is located in Period 5, Group 13 of the periodic table, within the p-block. Its relative atomic mass is 114.818(3) Dalton, with the number in brackets indicating the measurement uncertainty. Indium compounds are evaporated under vacuum to form thin films in the production of electronics and photovoltaic cells. Pure indium is also utilized as a film layer in semiconductors, due to its excellent electrical conductivity and thermal properties.

Related Product: Indium (In) Sputtering Target

Tin

Tin, also known as stannum, is a chemical element with its name originating from the Anglo-Saxon word “tin” and the Latin word “stannum,” meaning hard. It has been in use since around 3500 BC. The chemical symbol for tin is “Sn,” and its atomic number is 50. Tin is located in Period 5, Group 14 of the periodic table, within the p-block. Its relative atomic mass is 118.710(7) Dalton, with the number in brackets indicating the measurement uncertainty. Tin is widely used in alloys, such as bronze, and in soldering due to its low melting point and resistance to corrosion.

Related Product: Tin (Sn) Sputtering Target

OxygenOxygen is a chemical element whose name comes from the Greek words ‘oxy’ and ‘genes,’ meaning acid-forming. It was first mentioned and observed by W. Scheele in 1771, who later accomplished and announced its isolation. The chemical symbol for oxygen is “O,” and its atomic number is 8. Oxygen is located in Period 2, Group 16 of the periodic table, within the p-block. Its relative atomic mass is 15.9994(3) Dalton, with the number in parentheses indicating the measurement uncertainty. Oxygen is essential for respiration in most life forms and plays a crucial role in combustion, oxidation, and various chemical processes.

Indium Tin Oxide Sputtering Target Application

The Indium Tin Oxide (ITO) Sputtering Target is widely used for thin film deposition in various applications, including decorative coatings, semiconductors, displays, LEDs, and photovoltaic devices. It is also important for functional coatings, the optical information storage industry, and glass coatings for automotive and architectural glass. Additionally, ITO is utilized in optical communication systems and other advanced technological applications due to its excellent electrical conductivity and optical transparency.

Indium Tin Oxide Sputtering Target Packing

Our Indium Tin Oxide (ITO) Sputtering Targets are meticulously tagged and labeled externally to ensure efficient identification and maintain strict quality control. We take extensive precautions to prevent any damage during storage and transportation, ensuring the highest standards of product integrity upon delivery.

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TFM offers Tin Oxide (ITO) Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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