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Iron Antimonide Sputtering Target (FeSb₂)

Iron Antimonide Sputtering Target, FeSb₂

Iron Antimonide Sputtering Target (FeSb₂)

Introduction

Iron Antimonide (FeSb₂) Sputtering Target is a thermoelectric and semiconductor material widely used in thin film deposition for research and industrial applications. Its narrow bandgap and excellent Seebeck coefficient make it a promising compound for energy conversion devices, infrared detectors, and advanced electronic components. The FeSb₂ sputtering target enables precise thin film fabrication for studying correlated electron systems and thermoelectric phenomena.

Detailed Description

FeSb₂ is an intermetallic compound composed of iron (Fe) and antimony (Sb) in a 1:2 atomic ratio. This material exhibits a unique combination of semiconducting and metallic properties depending on temperature, making it of great interest for both physics research and device manufacturing.

The Iron Antimonide Sputtering Target is typically manufactured using vacuum hot pressing or hot isostatic pressing (HIP) to achieve high density and excellent mechanical integrity. The resulting targets have a homogeneous microstructure, ensuring uniform thin film deposition during DC or RF magnetron sputtering.

Typical characteristics include:

  • High purity (99.9%–99.99%), minimizing contamination during sputtering.

  • Fine-grained, dense microstructure, which enhances sputtering efficiency and film uniformity.

  • Good thermal stability, ensuring consistent performance under prolonged sputtering conditions.

FeSb₂ thin films are often explored for thermoelectric applications because of their exceptional power factor and low thermal conductivity, making this target ideal for both research and pilot-scale production.

Applications

Iron Antimonide (FeSb₂) Sputtering Targets are commonly used in:

  • Thermoelectric thin films for energy harvesting and Peltier cooling devices.

  • Infrared and optical sensors, benefiting from the material’s narrow bandgap properties.

  • Semiconductor and spintronic devices for electronic material research.

  • Correlated electron and low-temperature physics studies, due to its unique electron transport behavior.

  • Functional coatings in advanced microelectronic and optoelectronic applications.

Technical Parameters

ParameterTypical Value / RangeImportance
Purity99.9% – 99.99%High purity reduces impurities in deposited films
CompositionFeSb₂ (1:2 atomic ratio)Ensures stoichiometric thin films
Density6.9 – 7.2 g/cm³Affects film growth rate and surface morphology
Diameter25 – 300 mm (custom)Compatible with various sputtering systems
Thickness3 – 6 mmOptimized for stable sputtering performance
BondingIndium / Copper backingImproves heat dissipation and film uniformity

Comparison with Related Materials

MaterialKey AdvantageTypical Application
FeSb₂High Seebeck coefficient, narrow-gap semiconductorThermoelectric & IR detectors
Bi₂Te₃Excellent thermoelectric performance at room temperatureCooling modules
Sb₂Te₃Phase-change memory materialData storage thin films

FAQ

QuestionAnswer
Can FeSb₂ targets be customized in size and bonding?Yes, we can supply FeSb₂ targets in various diameters, thicknesses, and with or without backing plates such as copper or titanium.
What sputtering method is recommended?Both DC and RF magnetron sputtering are suitable, depending on the substrate and desired film properties.
Is FeSb₂ brittle?Yes, as an intermetallic compound, FeSb₂ is relatively brittle, so careful handling and mounting are recommended.
What are typical substrate materials?Common substrates include Si, sapphire (Al₂O₃), and glass for thermoelectric or optical film growth.
Can FeSb₂ be used for thermoelectric applications?Absolutely. FeSb₂ is known for its high thermoelectric power factor, making it valuable for energy conversion research.

Packaging

Our FeSb₂ Sputtering Targets are carefully vacuum-sealed with protective foam and placed in export-grade cartons or wooden crates. Each piece is externally labeled for clear identification and traceability, ensuring safe transportation and perfect condition upon delivery.

Conclusion

The Iron Antimonide (FeSb₂) Sputtering Target offers researchers and engineers a reliable material for high-performance thermoelectric and semiconductor thin films. With its controllable stoichiometry, excellent purity, and compatibility with diverse sputtering systems, it supports both scientific discovery and industrial innovation.

For detailed specifications and a quotation, please contact us at [sales@thinfilmmaterials.com].

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FeSb₂ target 3N 2"×1/8"

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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