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ST0942 Lead Antimonide Sputtering Target, PbSb

Chemical FormulaPbSb
Catalog No.ST0942
CAS Number12266-38-5
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

 

Lead Antimonide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Lead Antimonide Sputtering Target Description

Lead Antimonide Sputtering Targets are characterized by their high purity and low impurity content, which contribute to their excellent electrical and optical properties. Their outstanding electrical conductivity makes them widely used in the electronics and power sectors. With stable physical and chemical properties, these targets maintain performance reliability even in demanding conditions. Their high thermal conductivity also supports efficient heat transfer, making them ideal for heat dissipation and thermal management applications. Due to these exceptional attributes, Lead Antimonide Sputtering Targets are utilized in a variety of fields, including solar cells, electronic devices, and other advanced technologies.

Related Product: Lead Sulfide Sputtering Target

Lead Antimonide Sputtering Target Specifications

Compound FormulaPbSb
Molecular Weight328.94
AppearanceDark Grey Target
Melting Point–
Density6.72
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Lead Antimonide Sputtering Target Handling Notes

Indium bonding is advisable for Lead Antimonide Sputtering Targets because the material has certain properties that can make sputtering challenging. Specifically, its brittleness and low thermal conductivity make it prone to issues like thermal shock during the sputtering process. Indium bonding helps to mitigate these risks, ensuring better performance and stability of the sputtering target.

Lead Antimonide Sputtering Target Application

Thanks to its unique properties and excellent quality, Lead Antimonide Sputtering Targets are highly versatile and find application in various fields. As a semiconductor, this material is suitable for the fabrication of devices such as photodiodes (photovoltaic diodes) and other electronic components. In addition to semiconductor applications, Lead Antimonide Sputtering Targets are valuable in the fields of photovoltaics and thermoelectrics. They are particularly useful in processes such as thin film deposition and the production of conductive and transparent conductive films, making them essential in the development of advanced electronic and energy devices.

Lead Antimonide Sputtering Target Packaging

Our Lead Antimonide Sputtering Target is meticulously handled during storage and transportation to ensure that the product retains its original quality. By adhering to stringent handling procedures, we guarantee that our sputtering targets arrive in perfect condition, ready for immediate use in your applications. This careful attention to detail helps maintain the superior performance and reliability of our products, ensuring they meet the highest industry standards.

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TFM offers Lead Antimonide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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