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Lithium Aluminate Substrate (LiAlO2)

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TFM’s Lithium Aluminate (LiAlO₂) Substrate

TFM provides high-quality Lithium Aluminate (LiAlO₂) substrates, ideal for GaN film growth due to their lower lattice mismatch with GaN crystals. These substrates offer excellent thermal stability and are suitable for advanced semiconductor applications.

Lithium Aluminate Substrate Physical Properties

PropertyDetails
MaterialLiAlO₂
Crystal StructureM4
Lattice (Å)a = 5.17, c = 6.26
Density (g/cm³)2.62 g/cm³
Melting Point1900°C
Hardness (Mohs)7.5

Lithium Aluminate Substrate Specifications

SpecificationDetails
Size10×3 mm, 10×5 mm, 10×10 mm, 15×15 mm, 20×15 mm, 20×20 mm, Dia 15 mm, Dia 20 mm, Dia 1″, Dia 2″, Dia 2.6″
Thickness0.5 mm, 1.0 mm
Crystal Orientation＜100＞, ＜001＞
PolishedSSP or DSP
Redirection Precision±0.5°
Edge Redirection2° (special in 1°)
Angle of CrystallineSpecial sizes and orientations available upon request
Surface Roughness (Ra)≤ 5 Å (5 μm × 5 μm)

Choose TFM’s Lithium Aluminate substrates for your advanced semiconductor needs, benefiting from their exceptional performance and precise specifications tailored for GaN film applications.

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FAQ

A thin film substrate is the base material upon which thin layers of materials are deposited to create electronic, optical, or mechanical devices. The substrate provides structural support and can influence the properties of the thin film.

The choice of substrate affects the film’s structural integrity, electrical properties, and overall performance. Factors like thermal expansion coefficient, surface smoothness, and chemical compatibility are crucial considerations.

Materials such as lanthanum aluminate (LaAlO₃), magnesium oxide (MgO), and strontium titanate (SrTiO₃) are commonly used due to their lattice compatibility and thermal stability, which are essential for optimal superconducting properties.

Metal substrates offer high electrical and thermal conductivity, making them suitable for applications requiring efficient heat dissipation and electrical connectivity. However, their surface properties and potential for oxidation must be managed during deposition.

These substrates are materials that can support the growth of thin films exhibiting magnetic or ferroelectric properties, essential for applications in memory devices, sensors, and actuators.

Semiconductor substrates, such as silicon wafers, serve as the foundation for integrated circuits and various electronic components, providing the necessary electrical characteristics and structural support for device fabrication.

Gallium Nitride (GaN) substrates are pivotal for high-performance optoelectronic and power devices due to their excellent thermal conductivity, high breakdown voltage, and efficiency. They are widely used in LEDs, power transistors, and RF components.

Halide crystal substrates, composed of halide compounds, are utilized in specialized optical applications, including infrared spectroscopy and laser systems, due to their unique optical properties.
Ceramic substrates provide high thermal stability, mechanical strength, and electrical insulation, making them ideal for high-frequency and high-power applications.
Proper surface preparation, including cleaning and polishing, ensures the removal of contaminants and surface irregularities, leading to improved film adhesion, uniformity, and performance.
Yes, thin films can be deposited on flexible substrates like polymers, enabling the development of flexible electronics and wearable devices. However, challenges include managing mechanical stress and ensuring film adhesion.
Challenges include ensuring lattice matching to minimize defects, managing thermal expansion differences to prevent stress and delamination, and achieving desired electrical and optical properties for specific applications.
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