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ST0882 Lithium Phosphorus Sulfide Sputtering Target, Li3PS4

Chemical Formula: Li3PS4
Catalog Number: ST0882
Purity: 99.9% ~ 99.999%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Lithium Phosphorus Sulfide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Lithium Phosphorus Sulfide Sputtering Target Description

LithiumThe Lithium Phosphorus Sulfide Sputtering Target is a silver-colored material composed of lithium (Li), phosphorus (P), and sulfur (S). This conductive ceramic solid electrolyte is commonly used in lithium-ion batteries, playing a critical role in their performance and efficiency.

Lithium, a chemical element named after the Greek word *lithos*, meaning “stone,” was first identified in 1817 by the Swedish chemist Johan August Arfwedson. Its isolation was later achieved and announced by the British chemist William Thomas Brande. Represented by the symbol “Li,” lithium has an atomic number of 3 and is located in Period 2 and Group 1 of the periodic table, within the s-block. Its relative atomic mass is 6.941(2) Dalton, with the number in parentheses indicating the uncertainty in its measurement.

Related: Lithium Sputtering Target

ManganeseManganese, a chemical element named either after the Latin word *magnes* (meaning magnet) or from the black magnesium oxide *magnesia nigra*, was first identified in 1770 by the Swedish chemist Carl Wilhelm Scheele. Its isolation was later achieved and announced by the German chemist Johann Gottlieb Gahn. Represented by the symbol “Mn,” manganese has an atomic number of 25 and is located in Period 4 and Group 7 of the periodic table, within the d-block. Its relative atomic mass is 54.938045(5) Dalton, with the number in parentheses indicating the measurement uncertainty.

Related: Manganese Sputtering Target

PhosphorusPhosphorus, a chemical element named after the Greek word *phosphoros*, meaning “bringer of light,” was first discovered in 1669 by the German chemist Hennig Brand. The isolation of phosphorus was also accomplished and announced by Brand. Represented by the symbol “P,” phosphorus has an atomic number of 15 and is located in Period 3 and Group 15 of the periodic table, within the p-block. Its relative atomic mass is 30.973762(2) Dalton, with the number in parentheses indicating the uncertainty in its measurement.

Sulfur

Sulfur, also spelled sulphur, is a chemical element whose name may derive from the Sanskrit *sulvere* or the Latin *sulfurium*, both referring to sulfur. It has been used since ancient times, with its discovery attributed to early civilizations in China and India before 2000 BC. Represented by the symbol “S,” sulfur has an atomic number of 16 and is located in Period 3 and Group 16 of the periodic table, within the p-block. Its relative atomic mass is 32.065(5) Dalton, with the number in parentheses indicating the uncertainty in its measurement.

Lithium Phosphorus Sulfide Sputtering Target Specification

Material TypeLithium Phosphorus Sulfide
SymbolLi3PS4
Color/AppearanceSilver Solid
Solubility in H2OReacts violently
Available SizesDia.: 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

Lithium Phosphorus Sulfide Sputtering Target Packing

Our Lithium Phosphorus Sulfide Sputtering Targets are meticulously tagged and labeled on the exterior to ensure efficient identification and rigorous quality control. We take every precaution to prevent damage during storage and transportation, preserving the integrity of the targets.

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TFM offers Lithium Phosphorus Sulfide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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