Thin Film Materials Logo
Generic selectors
Exact matches only
Search in title
Search in content
Post Type Selectors
mgb2-removebg-preview

ST0296 Magnesium Boride Sputtering Target, MgB2

Chemical Formula: MgB2
Catalog Number: ST0296
CAS Number: 12007-25-9
Purity: 99.9%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Magnesium Boride sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Magnesium Boride Sputtering Target Description

A Magnesium Boride Sputtering Target is a ceramic material made from magnesium and boron, used in sputtering processes. This type of target is typically utilized in thin film deposition and other specialized applications, taking advantage of the unique properties of the magnesium-boron composition.

Magnesium

Magnesium is a chemical element with the symbol “Mg” and an atomic number of 12. The name “magnesium” comes from Magnesia, a district in Eastern Thessaly, Greece. It was first noted in 1755 by Joseph Black, with the element’s isolation later achieved and announced by Sir Humphry Davy. Magnesium is located in Period 3 and Group 2 of the periodic table, classified as an s-block element. Its relative atomic mass is approximately 24.3050 Daltons, with the number in parentheses indicating a margin of uncertainty.

Related Product: Magnesium Sputtering Target

BoronBoron, represented by the symbol “B” and atomic number 5, gets its name from the Arabic word ‘buraq,’ which referred to borax. It was first identified in 1808 by scientists Louis-Joseph Gay-Lussac and Louis-Jacques Thénard, with the isolation of the element later achieved and announced by Sir Humphry Davy. Boron is located in Period 2 and Group 13 of the periodic table, classified within the p-block. Its relative atomic mass is approximately 10.811 Daltons, with the value in parentheses indicating a margin of uncertainty.

Magnesium Boride Sputtering Target Specification

Compound FormulaMgB2
Molecular Weight45.927
AppearanceGray crystalline solid
Melting Point830 °C (1,530 °F; 1,100 K)
Density2.57 g/cm3
Exact Mass46.003653
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

Magnesium Boride Sputtering Target Application

The Magnesium Boride Sputtering Target is used in various applications, including thin film deposition and decorative coatings. It is widely employed in the semiconductor industry, display technologies, LED and photovoltaic device manufacturing, and functional coatings. Additionally, this material is valuable in the optical information storage industry, glass coating for automotive and architectural applications, and optical communication technologies.

Packaging

Our Magnesium Boride Sputtering Targets are carefully tagged and labeled on the exterior to ensure easy identification and maintain high quality control standards. We take extensive precautions to prevent any potential damage during storage and transportation, ensuring the targets arrive in excellent condition.

Get Contact

TFM offers Magnesium Boride Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

Reviews

There are no reviews yet.

Be the first to review “ST0296 Magnesium Boride Sputtering Target, MgB2”

Your email address will not be published. Required fields are marked *

Related Products

Related products

FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
Shopping Cart
Scroll to Top