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ST0176 Manganese Oxide Sputtering Target, MnO

Chemical Formula: MnO
Catalog Number: ST0176
CAS Number: 1344-43-0
Purity: >99.9%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Manganese Oxide (MnO) sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Manganese Oxide Sputtering Target Description

The Manganese Oxide Sputtering Target from TFM is an oxide sputtering material composed of manganese (Mn) and oxygen (O).

manganeseManganese is a chemical element with the symbol “Mn,” derived either from the Latin word ‘magnes,’ meaning magnet, or from the black magnesium oxide, ‘magnesia nigra.’ It was first mentioned in 1770 and observed by O. Bergman, with its isolation later accomplished and announced by G. Gahn. Manganese has an atomic number of 25 and is located in Period 4, Group 7 of the periodic table, within the d-block. Its relative atomic mass is 54.938045(5) Dalton, with the number in brackets indicating the measurement uncertainty. Manganese is essential in steel production, improving hardness, stiffness, and strength. It is also important in the production of batteries, chemicals, and as a trace nutrient in biological processes.

Related Product: Manganese Sputtering Target

OxygenOxygen is a chemical element with the symbol “O,” derived from the Greek words ‘oxy’ and ‘genes,’ meaning acid-forming. It was first mentioned and observed by W. Scheele in 1771, who also accomplished and announced its isolation. Oxygen has an atomic number of 8 and is located in Period 2, Group 16 of the periodic table, within the p-block. Its relative atomic mass is 15.9994(3) Dalton, with the number in brackets indicating the measurement uncertainty. Oxygen is essential for life, playing a crucial role in respiration, combustion, and various chemical processes. It is also a major component of water, organic compounds, and the Earth’s atmosphere.

Manganese Oxide Sputtering Target Specification

Material TypeManganese (II) Oxide
SymbolMnO
Color/AppearanceSolid
Melting Point1,945° C
Density5.03 g/cm³
Type of BondIndium bonding
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

Manganese Oxide Sputtering Target Handling Notes

  • Indium Bonding: Indium bonding is recommended for the Manganese Oxide (MnO) sputtering target. TFM collaborates with the Taiwan Bonding Company to provide high-quality bonding services, ensuring optimal performance and durability of the targets. Standard backing plates are machined to precisely fit the sputtering targets.
  • Thermal Conductivity: Manganese oxide has low thermal conductivity and is susceptible to thermal shock. Proper bonding and handling techniques are essential to prevent damage and maintain the integrity of the target during the sputtering process.

Packaging

Our Manganese Oxide (MnO) Sputtering Target is meticulously tagged and labeled externally to ensure efficient identification and maintain stringent quality control. We take great care to prevent any damage during storage and transportation, ensuring the targets arrive in excellent condition and retain their high quality for optimal performance in various applications.

Get Contact

TFM offers Manganese Oxide (MnO) Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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