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ST0936 Manganese (II) Selenide Sputtering Target, MnSe

Chemical FormulaMnSe
Catalog No.ST0936
CAS Number1313-22-0
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Manganese (II) Selenide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Manganese (II) Selenide Sputtering Target Description

Manganese (II) Selenide Sputtering Targets are semiconductors with unique dilute magnetic properties, making them valuable for specialized applications and research in the semiconductor field. These targets are ideal for depositing thin films with semiconducting characteristics, which can be applied in electronic and optoelectronic technologies.

TFM offers high-quality Manganese (II) Selenide Sputtering Targets that combine exceptional performance with competitive pricing. Our dedication to excellence ensures that our products meet stringent industry standards, delivering optimal results across various applications. With TFM, you can rely on superior quality and affordability for your advanced materials needs.

Related Product: Manganese Sulfide Sputtering Target, Manganese Dioxide Sputtering Target

Manganese (II) Selenide Sputtering Target Specifications

Compound FormulaMnSe
Molecular Weight133.90
Appearancegray target
Melting Point–
Density5.45-5.59 g/cm3
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Manganese (II) Selenide Sputtering Target Handling Notes

    1. Indium bonding is recommended for the Manganese (II) Selenide Sputtering Target due to its brittleness and low thermal conductivity, which can pose challenges during sputtering. These characteristics make the material prone to thermal shock. Indium bonding helps address these issues, enhancing the target’s stability and performance throughout the sputtering process.

Manganese (II) Selenide Sputtering Target Application

  • Manganese (II) Selenide offers diverse applications across several fields:
    • Thin-Film Electronics: As a semiconductor, manganese (II) selenide is used in the fabrication of thin-film transistors (TFTs) and other electronic devices. These thin films are crucial for constructing electronic circuits in displays, sensors, and flexible electronics.
    • Optoelectronics: Manganese (II) selenide thin films are suitable for optoelectronic devices due to their semiconducting properties. They can be utilized in light-emitting diodes (LEDs) and photodetectors.
    • Magnetic Devices: The magnetic properties of manganese (II) selenide are advantageous for developing magnetic devices, such as magnetic sensors and memory devices.
    • Solar Cells: Manganese (II) selenide is also explored for use in thin-film solar cells. Its semiconductor characteristics make it a promising candidate for photovoltaic applications.

Manganese (II) Selenide Sputtering Target Packaging

Our Manganese (II) Selenide Sputtering Target is meticulously handled throughout storage and transportation to ensure it retains its original quality and condition. We take every measure to preserve the integrity of our products, ensuring they arrive in optimal condition for your applications.

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TFM offers Manganese (II) Selenide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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