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ST0325 Manganese (II) Telluride Sputtering Target, MnTe

Chemical Formula: MnTe
Catalog Number: ST0325
CAS Number: 12032-88-1
Purity: 99.9%, 99.95%, 99.99%, 99.995%, 99.999%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Manganese (II) Telluride sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

COA_MnTe_TargetPdf

 

Introduction

Manganese (II) Telluride (MnTe) sputtering targets are compound semiconductor materials designed for depositing magnetic and semiconducting thin films. As a II–VI transition metal chalcogenide, MnTe exhibits antiferromagnetic ordering and tunable electronic properties, making it highly attractive for spintronics, magnetic semiconductor research, and advanced optoelectronic studies.

With controlled stoichiometry and dense microstructure, MnTe sputtering targets enable the fabrication of high-quality thin films for both experimental and emerging device applications.

Detailed Description

MnTe is a compound formed by manganese (Mn) and tellurium (Te) in approximately a 1:1 atomic ratio. It commonly crystallizes in a hexagonal (NiAs-type) structure and displays antiferromagnetic behavior below its Néel temperature. Its electronic band structure and magnetic ordering make it a key material in diluted magnetic semiconductors and magneto-transport research.

High-quality MnTe sputtering targets are typically manufactured through vacuum melting or powder metallurgy followed by hot pressing or hot isostatic pressing (HIP). Strict processing control ensures:

  • Accurate Mn:Te stoichiometric ratio

  • High relative density (≥95–99% theoretical density)

  • Uniform grain distribution

  • Minimal secondary phase formation

Density and compositional homogeneity are critical for stable sputtering performance and consistent film composition. Due to its semiconducting nature, MnTe targets are generally compatible with RF sputtering, while DC sputtering may be applied depending on target resistivity and system configuration.

For improved thermal management and mechanical stability in high-power applications, MnTe targets can be bonded to copper backing plates.

Applications

MnTe sputtering targets are widely used in:

  • Spintronics & Magnetic Semiconductor Research
    Investigation of antiferromagnetic and spin-dependent transport phenomena.

  • Diluted Magnetic Semiconductor Films
    Integration into heterostructures for magneto-optical studies.

  • Topological & Quantum Materials Research
    Exploration of novel magnetic phases and interface effects.

  • Optoelectronic Thin Films
    Research on band structure engineering and magnetic optoelectronics.

  • Advanced Functional Coatings
    Experimental magnetic and semiconducting thin films.

  • University & National Laboratory R&D
    Materials science and condensed matter research programs.

Technical Parameters

ParameterTypical Value / RangeImportance
Chemical FormulaMnTeDefines film stoichiometry
Purity99.9% – 99.99% (3N–4N)Minimizes impurity-related defects
Density≥95–99% theoretical densityEnsures stable sputtering behavior
Diameter1″ – 4″ (custom available)Suitable for R&D systems
Thickness3 – 8 mmAffects lifetime & deposition rate
BondingCu backing plate optionalImproves heat dissipation
Recommended ProcessRF sputtering preferredSuitable for semiconducting materials

Comparison with Related Materials

MaterialKey AdvantageTypical Application
Manganese Telluride (MnTe)Antiferromagnetic semiconductor behaviorSpintronic research
Manganese Selenide (MnSe)Similar magnetic properties with different band gapMagnetic thin films
Cadmium Telluride (CdTe)Direct band gap semiconductorSolar cells
Tellurium (Te)Semiconductor with high anisotropyPhase-change & electronics

MnTe is selected when magnetic ordering and semiconductor characteristics are both essential in thin-film design.

FAQ

QuestionAnswer
Can the Mn:Te ratio be customized?Yes, slight compositional adjustments can be supplied upon request.
Is bonding necessary for small targets?For laboratory-scale targets, bonding is optional; it is recommended for larger or high-power systems.
What sputtering method is recommended?RF sputtering is generally preferred due to semiconducting properties.
Are small R&D quantities available?Yes, small-diameter targets are available for research use.
How is the product packaged?Vacuum-sealed with protective cushioning and export-grade cartons or wooden crates.

Packaging

Our Manganese (II) Telluride Sputtering Targets are meticulously tagged and labeled externally to ensure efficient identification and maintain high standards of quality control. We take great care to prevent any potential damage during storage and transportation, ensuring the targets arrive in perfect condition.

Conclusion

Manganese (II) Telluride (MnTe) sputtering targets provide a reliable material source for depositing magnetic semiconductor thin films. With precise stoichiometry, high density, and customizable configurations, MnTe targets support advanced research in spintronics, quantum materials, and functional oxide electronics.

For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

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MnTe TRG 1:1 at% Ø2″×2mm Bonded to 2mm Cu BP

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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