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ST0043 N-type Silicon Sputtering Target (N-doped Si)

Chemical Formula: N-type Silicon
Catalog Number: ST0043
CAS Number: 7440-21-3
Purity: 99.9%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

N-type Silicon sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

N-type Silicon Sputtering Target Description

SiliconThe N-type silicon sputtering target is dark gray with a bluish tinge. Silicon, symbolized as “Si,” derives its name from the Latin word ‘silex’ or ‘silicis,’ meaning flint. It was first mentioned in 1824 and discovered by J. Berzelius, who also accomplished its isolation. Silicon has an atomic number of 14 and is located in Period 3, Group 14 of the periodic table, within the p-block. Its relative atomic mass is 28.0855 Daltons, with the number in brackets indicating the measurement uncertainty.

N-type Silicon Sputtering Target Specification

Material Type N-type Silicon
Symbol Si
Color/Appearance Dark Gray with a Bluish Tinge, Semi-Metallic
Melting Point 1,410 °C
Density 2.32 g/cc
Thermal Conductivity 150 W·m-1·K-1 (25°C)
Thermal Expansion 2.6 x 10-6/K (25°C)
Available Sizes Dia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

We also offer other customized shapes and sizes of the sputtering targets; please Contact Us for more information.

N-type Silicon Sputtering Target Bonding Services

Specialized bonding services for N-type Silicon Sputtering Targets, including indium and elastomeric bonding techniques, enhance performance and durability. Thin Film Materials (TFM) ensures high-quality solutions that meet industry standards and customer needs.

We also offer custom machining of backing plates, which is essential for sputtering target assembly. This comprehensive approach improves target design flexibility and performance in thin film deposition. Our channels provide detailed information about bonding materials, methods, and services, helping clients make informed decisions.

N-type Silicon Sputtering Target Application

Applications of N-Type Silicon Sputtering Target

The N-type silicon sputtering target is used in various applications, including:

  • Thin film deposition
  • Decoration
  • Semiconductor manufacturing
  • Displays
  • LED and photovoltaic devices
  • Functional coatings
  • Optical information storage
  • Glass coating for automotive and architectural glass
  • Optical communications

Other Applications of Silicon

  • Solar Cells: Silicon is a key material in the production of solar cells.
  • Transistors: Widely used in the manufacturing of transistors.
  • Semiconductors: Essential in semiconductor devices.
  • Rectifiers and Solid-State Devices: Used extensively in electronics and space sectors for rectifiers and other solid-state devices.

N-type Silicon Sputtering Target Packaging

Our N-type silicon sputter coater targets are clearly tagged and labeled externally to ensure efficient identification and quality control. We take great care to prevent any damage during storage and transportation, ensuring the targets remain in pristine condition.

Get Contact

TFM offers N-type Silicon Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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