Neodymium Gallate Substrate (NdGaO₃)
TFM offers high-quality Neodymium Gallate (NdGaO₃) substrates, known for their exceptional lattice matching, high thermal stability, and superior dielectric properties. These substrates are ideal for epitaxial growth of complex oxide materials, making them a popular choice in quantum electronics, superconductivity, and high-performance optoelectronic applications.
NdGaO₃ substrates provide excellent conductivity for the growth of high-quality thin films and are widely used in the fabrication of ferroelectric, piezoelectric, and multiferroic materials. Their high refractive index and transparency in the visible and infrared spectrum also make them suitable for optical and photonic device applications. Additionally, NdGaO₃ substrates are beneficial in oxide electronics, offering low defect density and high quality for advanced research in spintronics and resistive switching devices.
TFM provides customized NdGaO₃ substrates, tailored to meet the rigorous demands of next-generation electronic and photonic devices, ensuring superior material quality and optimal performance in cutting-edge applications.
Key Physical Properties
Property | Value |
---|---|
Material | NdGaO₃ (Neodymium Gallate) |
Structure | Orthorhombic |
Lattice Constant (Å) | a = 5.43, b = 5.5, c = 7.71 |
Growth Method | Czochralski |
Melting Point | 1600℃ |
Density | 7.57 g/cm³ |
Permittivity | ε = 25 |
Specifications
- Size: 10×3 mm, 10×5 mm, 10×10 mm, 15×15 mm, 20×20 mm, Dia 15 mm, Dia 20 mm, Dia 1”, Dia 2”
- Thickness: 0.5 mm, 1.0 mm
- Polishing: SSP or DSP
- Orientation: <100>, <110>, <111>
- Redirection Precision: ±0.5°
- Edge Redirection: 2° (special 1° available)
- Angle of Crystalline: Custom sizes and orientations available
- Surface Roughness (Ra): ≤5Å (5µm × 5µm)
Packaging Details
Neodymium Gallate substrates are carefully packaged in class 100 clean bags or wafer containers within a class 1000 clean room to ensure cleanliness and optimal quality.
Explore high-performance Neodymium Gallate Substrates (NdGaO₃) from TFM for high-quality epitaxial film growth and advanced superconducting and magnetic material applications.
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