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ST0266 Nickel Silicide Sputtering Target, NiSi2

Chemical Formula: NiSi2
Catalog Number: ST0266
CAS Number: 12201-89-7
Purity: 99.9%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Nickel Silicide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Nickel Silicide Sputtering Target Description

Nickel silicide sputtering target is a type of silicide ceramic sputtering target composed of nickel and silicon.

Nickel

Nickel is a chemical element derived from the German term kupfernickel, which means “devil’s copper” or “St. Nicholas’s copper.” It was first identified in 1751 by F. Cronstedt. The element was subsequently isolated and confirmed by Cronstedt himself. Its canonical chemical symbol is Ni, and it has an atomic number of 28. Nickel is located in Period 4 and Group 10 of the periodic table, within the d-block. The relative atomic mass of nickel is 58.6934(2) Dalton, with the number in parentheses indicating the uncertainty.

Related Product: Nickel Sputtering Target

Silicon

Silicon is a chemical element named after the Latin silex or silicis, which means “flint.” It was first identified in 1824 by J. Berzelius, who also accomplished its isolation. The canonical chemical symbol for silicon is Si, and it holds the atomic number 14. Silicon is positioned in Period 3 and Group 14 of the periodic table, belonging to the p-block. Its relative atomic mass is 28.0855(3) Dalton, with the number in parentheses indicating the uncertainty.

Nickel Silicide Sputtering Target Application

Nickel Silicide Sputtering Targets are utilized in a wide range of applications. They play a crucial role in thin film deposition, semiconductor production, and the creation of decorative and functional coatings. These targets are also essential in the manufacturing of displays, LEDs, and photovoltaic devices. Beyond these uses, they are important in the optical information storage industry, glass coating for automotive and architectural purposes, and optical communications. Their versatility and unique properties make them valuable across various high-tech industries.

Nickel Silicide Sputtering Target Packing

Our Nickel Silicide Sputtering Targets are carefully tagged and labeled to ensure easy identification and strict quality control. We take great precautions to protect these targets from any potential damage during storage or transportation, ensuring they reach you in perfect condition. This meticulous attention to detail guarantees that our products meet the highest standards of quality and reliability.

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TFM offers Nickel Silicide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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