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ST0403 Planar Copper (Cu) Sputtering Target

Chemical Formula: Cu
Catalog Number: ST0403
CAS Number: 7440-50-8
Purity: 99.9%, 99.99%, 99.999%
Thermal Conductivity: 400 W/m.K
Melting Point (°C): 1,083
Coefficient of Thermal Expansion: 16.5 x 10-6/K

Planar Copper sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Planar Copper Sputtering Target Description

The Planar Copper Sputtering Target is a series of processed products made from high-purity copper material, designed to have specific sizes and shapes. These targets are primarily used for vacuum coating applications.

CopperCopper is a chemical element with the symbol “Cu” and an atomic number of 29. The name “copper” originates from the Old English word ‘coper,’ which is derived from the Latin term ‘Cyprium aes,’ meaning a metal from Cyprus. Copper has been used since approximately 9000 BC and was discovered by people from the Middle East. It is located in Period 4 and Group 11 of the periodic table, belonging to the d-block elements. The relative atomic mass of copper is approximately 63.546 Daltons, with the number in parentheses indicating a margin of uncertainty.

Related Product: Copper Sputter Target

Planar Copper Sputtering Target Specification

WLTGW
Dimension70”90”1/2”< 450 lbs

Planar Copper Target

Material TypeCopper
SymbolCu
Color/AppearanceCopper, Metallic
Melting Point1,083 ℃
Density8.96 g/cm3

Packaging

Our Planar Copper Sputtering Targets are carefully handled to prevent damage during storage and transportation, ensuring the quality of our products is preserved in their original condition.

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TFM offers Planar Copper Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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