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Rotatory Titanium (Ti) Sputtering Target

ST0407 Rotatory Tungsten (W) Sputtering Target

Chemical Formula:Ā W
Catalog Number:Ā ST0407
CAS Number:Ā 7440-33-7
Purity:Ā 99.95%
Thermal Conductivity:Ā 174 W/m.K
Melting Point (Ā°C):Ā 3,410
Coefficient of Thermal Expansion:Ā 4.5 x 10-6/K

Rotatory Tungsten sputtering targetĀ  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Rotatory Tungsten Sputtering Target Description

TungstenThe Rotatory Tungsten Sputtering Target is a series of processed products made from high-purity tungsten material, designed to have specific sizes and shapes. These targets are primarily used for vacuum coating applications.

Tungsten, also known as wolfram, is a chemical element with the symbol “W” and an atomic number of 74. The name “tungsten” originates from the Swedish words ā€˜tung sten,ā€™ meaning heavy stone, while “W” is derived from “wolfram,” the old name of the tungsten mineral wolframite. Tungsten was first mentioned in 1781 and observed by Carl Wilhelm Scheele. The isolation of tungsten was later accomplished and announced by the Elhuyar brothers, Juan JosĆ© and Fausto. Tungsten is located in Period 6 and Group 6 of the periodic table, belonging to the d-block elements. Its relative atomic mass is approximately 183.84 Daltons, with the number in parentheses indicating a margin of uncertainty.

Related Product: Tungsten Sputtering Target

Rotatory Tungsten Sputtering Target Specification

ODIDL
Dimension5.5ā€-7ā€5ā€-5.5ā€<138ā€

Rotatory Tungsten (W) Sputtering Target

Material TypeTungsten
SymbolW
Color/AppearanceGrayish White, Lustrous, Metallic
Melting Point3410Ā°C
Density19.3 g/cm3

Rotatory Target VS. Planar Target

Compared to planar targets, rotary targets contain more material and offer greater utilization, resulting in longer production runs and reduced system downtime, which increases the throughput of the coating equipment. Additionally, rotary sputter targets allow for the use of higher power densities because the heat build-up is spread evenly over the surface area of the target. This leads to increased deposition speeds and improved performance during reactive sputtering.

Packaging

Our Rotatory Tungsten Sputtering Targets are carefully handled to prevent damage during storage and transportation, ensuring the quality of our products is preserved in their original condition.

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TFM offers Rotatory Tungsten (W) Sputtering TargetĀ  Ā in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

Itā€™s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Alā‚‚Oā‚ƒ, SiOā‚‚, TiOā‚‚), alloys, or compositesā€”chosen based on the filmā€™s desired properties.

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They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

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In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

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Key factors include the targetā€™s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

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Operators monitor target erosion (often by measuring the depth of the eroded ā€œrace trackā€) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

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Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

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DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the targetā€™s surface.

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In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also ā€œpoisonā€ the target surface if not carefully controlled.

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Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

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Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

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