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ST0227 Silicon Carbide Sputtering Target, SiC

Chemical Formula: SiC
Catalog Number: ST0227
CAS Number: 409-21-2
Purity: 99.5%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Silicon Carbide  sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Silicon Carbide Sputtering Target Description

Silicon Carbide sputtering target from TFM is a carbide ceramic material with the chemical formula SiC.

SiliconSilicon is a chemical element that originated from the Latin words ‘silex’ or ‘silicis,’ meaning flint. It was first mentioned in 1824 and observed by J. Berzelius, who also accomplished its isolation and announced it. The canonical chemical symbol for silicon is “Si,” and it has an atomic number of 14. Silicon is located in Period 3 and Group 14 of the periodic table, belonging to the p-block. Its relative atomic mass is 28.0855(3) Dalton, with the number in brackets indicating the measurement uncertainty.

Related Product: P-Type Silicon Sputtering Target

CarbonCarbon is a chemical element that traces its name to the Latin word ‘carbo,’ meaning charcoal. It has been in use since at least 3750 BC, first discovered by ancient civilizations such as the Egyptians and Sumerians. The chemical symbol for carbon is “C,” and it has an atomic number of 6. Positioned in Period 2 and Group 14 of the periodic table, carbon is part of the p-block elements. Its relative atomic mass is 12.0107(8) Dalton, with the number in parentheses indicating the uncertainty of the measurement.

Silicon Carbide Sputtering Target Specification

Material Type Silicon Carbide
Symbol SiC
Melting Point (°C) ~2,700
Theoretical Density (g/cc) 3.22
Sputter RF
Type of Bond Indium, Elastomer
Comments Sputtering preferred.

Silicon Carbide Sputtering Target Bonding Services

Specialized bonding services for Silicon Carbide Sputtering Targets, including indium and elastomeric bonding techniques, enhance performance and durability. Thin Film Materials (TFM) ensures high-quality solutions that meet industry standards and customer needs.

We also offer custom machining of backing plates, which is essential for sputtering target assembly. This comprehensive approach improves target design flexibility and performance in thin film deposition. Our channels provide detailed information about bonding materials, methods, and services, helping clients make informed decisions.

Silicon Carbide Sputtering Target Packaging

Our Silicon Carbide Sputtering Target is meticulously tagged and labeled externally to guarantee accurate identification and maintain strict quality control. We exercise great caution during handling and packaging to prevent any potential damage during storage or transportation, ensuring the product reaches you in pristine condition.

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TFM offers Silicon Carbide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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