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ST0215 Silicon Nitride Sputtering Target, Si3N4

Chemical Formula: Si3N4
Catalog Number: ST0215
CAS Number: 12033-89-5
Purity: 99.5%, 99.9%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Silicon Nitride sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Silicon Nitride Sputtering Target Description

SiliconThe silicon nitride sputtering target, denoted as Si3N4, is a type of nitride ceramic sputtering material. Known for its high melting point, this ceramic material is extremely hard and chemically inert. Silicon nitride is typically prepared by heating powdered silicon between 1300 °C and 1400 °C in a nitrogen atmosphere. Once prepared, the silicon nitride powder can be sintered into specific shapes. This material is commonly used in thin film deposition processes across various applications.

Silicon Nitride Sputtering Target Specifications

Material TypeSilicon Nitride
SymbolSi3N4
Color/AppearanceWhite to Gray or Dark Gray to Black, Crystalline Solid
Melting Point 1,900 °C
Density 2.2 to 3.5 g/cm3
SputterRF, RF-R
Type of BondIndium, Elastomer
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

We also offer other customized shapes and sizes of the sputtering targets; please Contact Us for more information.

Silicon Nitride Sputtering Target Applications

Silicon nitride sputtering targets are widely utilized in various industries, including CD-ROM production, decorative coatings, semiconductors, displays, LEDs, photovoltaic devices, and functional coatings. They are also used in optical information storage, glass coatings for automotive and architectural applications, and optical communications.

As one of the most thermodynamically stable technical ceramic materials, silicon nitride boasts high hardness, making it ideal for bearing components that need to operate under high speeds and temperatures. Its exceptional thermal stability and resistance to thermal shock make it suitable for high-temperature applications, such as in rocket engines. Silicon nitride is one of the few monolithic ceramics capable of withstanding the extreme thermal conditions found in hydrogen-oxygen rocket engines, highlighting its durability and versatility.

Silicon Nitride Sputtering Target Bonding Services

Specialized bonding services for Silicon nitride Sputtering Targets, including indium and elastomeric bonding techniques, enhance performance and durability. Thin Film Materials (TFM) ensures high-quality solutions that meet industry standards and customer needs.

We also offer custom machining of backing plates, which is essential for sputtering target assembly. This comprehensive approach improves target design flexibility and performance in thin film deposition. Our channels provide detailed information about bonding materials, methods, and services, helping clients make informed decisions.

Silicon Nitride Sputtering Target Packing

Our silicon nitride sputter targets are meticulously tagged and labeled externally to ensure clear identification and maintain stringent quality control standards. We take exceptional care in handling and packaging these targets to prevent any damage during storage or transportation, ensuring they arrive in pristine condition for optimal performance in your applications.

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TFM offers Silicon Nitride Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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