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Silicon Phosphorous Sputtering Target, Si-P

Chemical FormulaSi-P
Catalog No.TFM-SPT-0531
CAS Number–
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Our Silicon Phosphorus Sputtering Target comes in a variety of forms, purities, and sizes. We excel in producing high-purity physical vapor deposition (PVD) materials, ensuring optimal density and minimal average grain sizes for applications in semiconductor, chemical vapor deposition (CVD), and physical vapor deposition (PVD) for both display and optical technologies.

Product Overview

Silicon Phosphorous Sputtering Target (Si-P) is a composition-specific sputtering target for thin-film deposition and PVD process development. The practical specification normally includes chemistry, purity, dimensions, density, target configuration, and any bonding or backing requirement needed by the sputtering cathode.

Material and Deposition Characteristics

Power mode and process conditions should be selected according to the target conductivity, thermal behavior, and the requirements of the cathode system. For less common materials, conservative initial power density and film-composition verification are good practice.

Technical Data

ParameterTypical Value / RangeImportance
CompositionSi–P (0.5–5 at.% P)Defines electrical conductivity
Purity99.99% – 99.999%Reduces contamination for semiconductor use
Density≥ 2.33 g/cm³ (near theoretical)Ensures uniform sputtering performance
Diameter25 – 300 mm (custom)Fits standard sputtering systems
Thickness3 – 10 mmBalances sputtering rate and target life
Backing PlateCopper / MolybdenumImproves heat dissipation and bonding strength
MaterialKey AdvantageTypical Application
Silicon Phosphorous (Si–P)Controlled n-type doping & stabilitySemiconductors, photovoltaics
Silicon Boron (Si–B)p-type dopingComplementary semiconductor layers
Pure Silicon (Si)High purity, intrinsic layerBase material for electronics
Silicon Germanium (Si–Ge)Tunable bandgap and strain controlHigh-speed electronics
QuestionAnswer
Can the phosphorus concentration be customized?Yes, from 0.5 to 5 at.% depending on electrical requirements.
Is the target suitable for both DC and RF sputtering?Yes, it performs well in both systems.
How are the targets bonded?Typically with copper or molybdenum backplates.
What purity levels are offered?4N to 5N purity levels are standard.
How are the targets packaged?Vacuum-sealed with desiccant, cushioned, and shipped in export-safe crates.

Typical Thin-Film Applications

  • Thin-film research and materials-development projects requiring a composition-specific sputtering source
  • Semiconductor, optical, energy, electronic, or laboratory coatings depending on the material system
  • Custom R&D work where target composition, purity, and geometry need to be specified together

Target Configuration and Ordering Considerations

For quotation and manufacturability review, provide target size, thickness, purity or alloy composition, quantity, and the sputtering gun or cathode model if known. If a bonded assembly is required, include backing-plate material, bonding preference, and any dimensional tolerances, surface-finish needs, or inspection-document requirements. TFM can also review customer drawings or old-target samples for replacement builds.

Frequently Asked Questions

What is the main reason to use a Silicon Phosphorous sputtering target?

It provides a composition-specific source for thin-film deposition when the target material itself is important to the desired film chemistry or process.

How should the sputtering mode for Silicon Phosphorous be selected?

The power mode should be chosen according to target conductivity, thermal behavior, and equipment capability. Less-conductive materials are commonly evaluated with RF power.

Why are density and microstructure important for Silicon Phosphorous targets?

These factors can influence erosion stability, thermal behavior, particle generation, and the risk of cracking or local hot spots.

Can Silicon Phosphorous be supplied with a backing plate?

Yes. If the material is brittle or the cathode requires it, a bonded configuration can be reviewed according to target size, thickness, cooling, and power.

Does target composition always equal film composition?

No. Film chemistry may differ because of sputtering yields, process conditions, substrate temperature, re-sputtering, and chamber history. Film verification is recommended when composition matters.

What should I provide to request a quotation for Silicon Phosphorous?

Please provide the composition, purity, dimensions, quantity, target configuration, cathode details, and any drawing or inspection requirements.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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