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Silicon Phosphorous Sputtering Target

ST0988 Silicon Phosphorous Sputtering Target, Si-P

Chemical FormulaSi-P
Catalog No.ST0988
CAS Number–
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

Our Silicon Phosphorus Sputtering Target comes in a variety of forms, purities, and sizes. We excel in producing high-purity physical vapor deposition (PVD) materials, ensuring optimal density and minimal average grain sizes for applications in semiconductor, chemical vapor deposition (CVD), and physical vapor deposition (PVD) for both display and optical technologies.

MSDS File

Silicon Phosphorous Sputtering Target Description

The Silicon Phosphorous Sputtering Target is an essential material in the production of advanced technologies, known for its outstanding sputtering performance and consistent material characteristics. Crafted from high-purity silicon and phosphorus, this target offers exceptional physical and chemical properties, making it highly suitable for a variety of applications, including thin-film deposition, nano-fabrication, and other precision manufacturing processes where controlling material properties with accuracy is critical.

Its consistent composition and high purity ensure that it delivers reliable and repeatable results, crucial for producing high-quality materials. Additionally, the target boasts excellent electrical conductivity, enhancing current transfer during the sputtering process and improving overall efficiency. Its thermal stability ensures minimal temperature fluctuations under high-power sputtering conditions, reducing the risks associated with thermal stress and deformation, thus maintaining the integrity of the sputtering process.

Related Product: Aluminum Silicon Sputtering Target, Silicon Carbide Sputtering Target

 

Silicon Phosphorous Sputtering Target Specifications

Compound FormulaSi-P
Molecular Weight59.6
AppearanceBlack Target
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

 

Silicon Phosphorous Sputtering Target Handling Notes

For the Silicon Phosphorous Sputtering Target, Indium bonding is recommended to address challenges associated with its properties. Due to its inherent brittleness and low thermal conductivity, the target can be prone to thermal shock during the sputtering process. Indium bonding provides a stable and reliable attachment, helping to mitigate these issues by enhancing the target’s performance and durability under operational conditions. This bonding method ensures better thermal management and reduces the risk of damage, contributing to more consistent sputtering results.

Silicon Phosphorous Sputtering Target Application

Silicon Phosphorus Sputtering Targets play a significant role across a variety of high-tech applications due to their exceptional properties. Here’s a detailed overview of their uses:
  1. Electronics Manufacturing: These targets are crucial in producing semiconductor devices, integrated circuits, and thin-film transistors. They help in depositing thin films with specific properties, such as semiconductor materials, insulating layers, and metal wires, ensuring high performance and reliability in electronic components.
  2. Optical Device Manufacturing: In the realm of optics, Silicon Phosphorus Sputtering Targets are used to create films with excellent optical properties. Their high purity and stability make them ideal for manufacturing transmittance enhancement films, reflective coatings, and optical filters, which are essential for advanced optical devices.
  3. Magnetic Recording Media Preparation: These targets are utilized in the production of magnetic recording media, including hard disk drives and magnetic tapes. They help in depositing magnetic films that offer high permeability and stability, crucial for efficient data storage and retrieval.
  4. Solar Cell Manufacturing: Silicon Phosphorus Sputtering Targets are also valuable in the production of solar cells. They contribute to creating high-efficiency, long-lasting solar cells, enhancing photoelectric conversion efficiency and overall performance of photovoltaic devices.
  5. Decorative and Architectural Industry: In this industry, these targets are used to apply durable and visually appealing surface coatings. They are ideal for coating materials like glass, ceramics, and stone, providing both aesthetic enhancement and durability.

Silicon Phosphorous Sputtering Target Packaging

Our Silicon Phosphorus Sputtering Target is meticulously managed throughout storage and transportation to maintain the integrity and quality of the product in its original condition.

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Our Silicon Phosphorus Sputtering Target comes in a variety of forms, purities, and sizes. We excel in producing high-purity physical vapor deposition (PVD) materials, ensuring optimal density and minimal average grain sizes for applications in semiconductor, chemical vapor deposition (CVD), and physical vapor deposition (PVD) for both display and optical technologies.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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