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Silicon (Si) Rotary Sputtering Target

Silicon (Si) Rotary Sputtering Target

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Introduction

Silicon (Si) Rotary Sputtering Target

TFM offers high-quality Silicon (Si) rotary sputtering targets, ideal for thin-film deposition in various semiconductor and photovoltaic applications. Silicon targets are essential for producing high-purity silicon films, which are widely used in semiconductor device fabrication, solar cells, and microelectromechanical systems (MEMS).

The rotary sputtering target design ensures uniform and efficient deposition of silicon films with excellent adhesion and thin-film properties, critical for applications such as integrated circuits (ICs), photoelectric devices, and sensors. The high-density and low impurity levels of the Si targets ensure superior quality films for next-generation electronics and optical coatings.

TFM supplies customized Silicon (Si) rotary sputtering targets, offering precise control over composition, purity, and deposition parameters. These targets are engineered for optimal performance, meeting the stringent requirements of industries like semiconductors, solar energy, and electronics.

Specifications

MaterialsSilicon (Si) Rotary Sputtering Target
SymbolSi
Conduction TypeP-type doped Boron, N-type doped Phosphorus
Purity99.9% – 99.999%
Theoretical Density (g/cc)2.32
Melting Point (°C)1,410
Production MethodSpraying Type, Bonded Type (CZ)
Backing TubeTitanium, Stainless Steel
Resistivity (Ω.cm)0.01 – 400
SizeAs per customer’s drawings
Relative Density>= 96%
Grain Sizes< 100 µm
Annual Capacity1000 tons

Applications

  • SiO2/Si3N4 Film
  • Thin Film Photovoltaic Solar Industry
  • Semiconductor Electronics Industry
  • Flat Panel Display Industry
  • Construction / Automotive Glass Industry
  • Optical Industry
  • Decorative / Functional Coating Industry

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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