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ST0285 Silicon Sulfide Sputtering Target, SiS2

Chemical Formula: SiS2
Catalog Number: ST0285
CAS Number: 13759-10-9
Purity: 99.5%, 99.9%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Silicon Sulfide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Silicon Sulfide Sputtering Target Description

Silicon Sulfide Sputtering Target is a type of sulfide ceramic sputtering target composed of silicon and sulfur. This target material is typically used in thin film deposition processes across various industries, including semiconductors, displays, photovoltaics, and more. Its unique properties make it suitable for creating specialized coatings and films in these applications.

Silicon

Silicon is a chemical element that originates from the Latin words ‘silex’ or ‘silicis,’ meaning flint. It was first mentioned in 1824 and observed by J. Berzelius, who also accomplished and announced its isolation. The chemical symbol for silicon is “Si.” It has an atomic number of 14, placing it in Period 3 and Group 14 of the periodic table, within the p-block. The relative atomic mass of silicon is 28.0855(3) Dalton, with the number in the brackets indicating the measurement uncertainty.

Related Product: Silicon Sputtering Target

Sulfur

Sulfur, also known as sulphur, is a chemical element that derives its name either from the Sanskrit ‘sulvere’ or the Latin ‘sulfurium,’ both referring to the element. It has been used since ancient times, with evidence of its use before 2000 BC by Chinese and Indian civilizations. The symbol for sulfur is “S,” and it is located in Period 3 and Group 16 of the periodic table, within the p-block. The relative atomic mass of sulfur is 32.065(5) Dalton, where the number in brackets indicates the uncertainty in the measurement.

Silicon Sulfide Sputtering Target Specification

Compound Formula SiS2
Appearance White Target
Melting Point 1,090° C
Density 1.85 g/cm3
Available Sizes Dia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

Silicon Sulfide Sputtering Target Application

The silicon sulfide sputtering target is utilized for various applications including thin film deposition, decoration, and in semiconductor manufacturing. It is commonly employed in the production of display and LED devices, photovoltaic systems, and for creating functional coatings. Additionally, it serves crucial roles in industries such as optical information storage, glass coating for automotive and architectural purposes, and optical communications, due to its desirable material properties.

Silicon Sulfide Sputtering Target Packing

Our silicon sulfide sputter targets are meticulously tagged and labeled externally to facilitate efficient identification and quality control. We take great care to prevent any potential damage during storage or transportation, ensuring that our products arrive in optimal condition.

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TFM offers Silicon Sulfide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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