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ST0147A Europium Sulfide Sputtering Target, EuS

Chemical Formula: EuS
Catalog Number: ST0147A
CAS Number: 12034-21-8
Purity: 99.9%, 99.95%, 99.99%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Europium Sulfide sputtering targets come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Europium Sulfide Sputtering Target – Premium Quality from TFM

TFM’s Europium Sulfide (EuS) Sputtering Target is engineered for advanced thin film deposition applications, offering exceptional purity and consistent performance. Europium Sulfide is a rare-earth chalcogenide compound widely used in magnetic, optical, and semiconductor research due to its unique ferromagnetic and semiconducting properties.

Key Features:

  • High Purity & Quality: Manufactured under stringent controls to ensure ultra-high purity and minimal contamination, delivering reliable and reproducible thin films.

  • Superior Film Uniformity: Optimized density and microstructure provide excellent sputtering efficiency and uniform erosion, resulting in high-quality thin films.

  • Versatile Application: Ideal for deposition in magneto-optical devices, spintronics, optoelectronics, and semiconductor thin film coatings.

  • Custom Sizes & Formats: Available in various diameters and thicknesses to meet your specific sputtering system requirements.

Choose TFM’s Europium Sulfide Sputtering Target to achieve superior thin film performance with reliable material consistency, helping you push the boundaries of cutting-edge research and industrial applications.

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EuS (Europium Sulfide) Sputtering Target 3N ø1"×5mm

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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