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ST0228 Tantalum Carbide Sputtering Target, TaC

Chemical Formula: TaC
Catalog Number: ST0228
CAS Number: 12070-06-3
Purity: 99.5%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Tantalum Carbide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Tantalum Carbide Sputtering Target Description

Tantalum Carbide sputtering target from TFM is a high-performance carbide ceramic material, represented by the formula TaC. This material is known for its hardness, thermal conductivity, and resistance to chemical corrosion, making it ideal for use in various advanced industrial applications, including thin film deposition and protective coatings.

TantalumTantalum is a chemical element with the symbol “Ta,” named after King Tantalus from Greek mythology. It was first identified in 1802 by Swedish chemist Anders Gustav Ekeberg. Tantalum has the atomic number 73 and is located in Period 6 and Group 5 of the periodic table, placing it in the d-block. This element is known for its high melting point, corrosion resistance, and relative atomic mass of 180.94788(2) Dalton, with the number in brackets indicating the measurement’s uncertainty.

Related Product: Tantalum Sputtering Target

CarbonCarbon is a chemical element with the symbol “C,” originating from the Latin word ‘carbo,’ meaning charcoal. It was first used around 3750 BC by the Egyptians and Sumerians. Carbon has an atomic number of 6 and is located in Period 2 and Group 14 of the periodic table, within the p-block. The relative atomic mass of carbon is 12.0107(8) Dalton, where the number in brackets indicates the uncertainty in this measurement.

Tantalum Carbide Sputtering Target Handling Notes

1. Indium bonding is recommended for Tantalum Carbide Sputtering Target due to certain characteristics that are not conducive to sputtering, such as brittleness and low thermal conductivity.

2. This material’s low thermal conductivity makes it susceptible to thermal shock.

Tantalum Carbide Sputtering Target Packaging

Our Tantalum Carbide Sputtering Targets are carefully tagged and labeled externally to ensure efficient identification and quality control. We take great care in handling and packaging to prevent any damage during storage or transportation, ensuring the product arrives in pristine condition.

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TFM offers Tantalum Carbide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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