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Tantalum Hafnium Carbide Sputtering Target

Tantalum Hafnium Carbide Sputtering Target, Ta₄HfC₅

Tantalum Hafnium Carbide Sputtering Target (Ta₄HfC₅)

Introduction

The Tantalum Hafnium Carbide (Ta₄HfC₅) Sputtering Target is a highly advanced ceramic material engineered for thin film deposition in extreme environments. Known for possessing one of the highest melting points among all known materials, Ta₄HfC₅ offers exceptional thermal resistance, mechanical strength, and chemical stability. These properties make it indispensable in high-performance coatings for aerospace, energy, and semiconductor applications.

Detailed Description

Tantalum Hafnium Carbide belongs to the family of ultra-high temperature ceramics (UHTCs). With its remarkable melting point (above 3900 °C), it is often utilized where conventional ceramics and carbides cannot withstand. When fabricated into sputtering targets, Ta₄HfC₅ is hot-pressed or sintered to achieve high density, ensuring uniform thin film deposition and reduced particle contamination.

Key Features:

  • Extreme thermal stability – maintains integrity under plasma and high-power sputtering.

  • Ultra-high hardness – forms protective films with excellent wear resistance.

  • Chemical inertness – resists oxidation and corrosion in demanding conditions.

  • Uniform film formation – high density minimizes defects and improves adhesion.

Applications

The Ta₄HfC₅ sputtering target is used in:

  • Semiconductor devices – diffusion barriers, advanced transistor structures.

  • Optical coatings – hard protective films for lenses and sensors.

  • Aerospace engineering – protective coatings for turbine blades and high-speed components.

  • Energy systems – coatings for nuclear, fusion, and thermal barrier applications.

  • Research & Development – experimental superhard materials and ultra-high temperature coatings.

Technical Parameters

ParameterTypical Value / RangeImportance
Purity99.5% – 99.9%Reduces impurities in deposited films
Density≥ 95% theoreticalImproves uniformity and minimizes porosity
Diameter25 – 300 mm (custom)Compatible with different sputtering systems
Thickness3 – 10 mmInfluences deposition stability and lifetime
Backing PlateCopper / MolybdenumEnhances cooling and structural support

Comparison with Related Materials

MaterialKey AdvantageTypical Application
Tantalum Hafnium Carbide (Ta₄HfC₅)Extreme melting point, high thermal stabilityAerospace & ultra-high temp coatings
Hafnium Carbide (HfC)High hardness and oxidation resistanceCutting tools, aerospace
Tantalum Carbide (TaC)Excellent wear resistanceIndustrial and protective films
Zirconium Carbide (ZrC)Good thermal conductivityStructural ceramics

FAQ

QuestionAnswer
Can Ta₄HfC₅ targets be customized?Yes, purity, size, bonding, and composition can be tailored.
What is the bonding option?Commonly copper or molybdenum plates to improve heat transfer.
How is it packaged?Vacuum-sealed, foam-cushioned, and shipped in export-safe crates.
Is it suitable for high-temperature applications?Yes, it is specifically designed for ultra-high temperature coatings.
Which industries use it most?Aerospace, semiconductor, energy, and advanced materials R&D.

Packaging

Each Tantalum Hafnium Carbide Sputtering Target is vacuum-packed, labeled for traceability, and carefully cushioned to avoid damage during transit. Wooden or reinforced cartons are used for secure international shipping.

Conclusion

The Ta₄HfC₅ sputtering target is an advanced material solution for researchers and industries that demand coatings with unmatched hardness, thermal stability, and chemical resistance. Its superior properties make it ideal for next-generation thin film applications.

For more details and quotations, please contact us at [sales@thinfilmmaterials.com].

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Ta₄HfC₅ target 99.9% at% ø30×3 mm Multi-Phase

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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