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ST0191A Tantalum Oxide Sputtering Targets (Ta2Ox)

MSDS File
Material TypeTantalum Oxide
SymbolTa2Ox
Color/AppearanceBlack, Solid
Melting Point (°C)1,872
Theoretical Density (g/cc)8.2
Z Ratio0.3
SputterRF, RF-R
Max Power Density*
(Watts/Square Inch)		20
Type of BondIndium, Elastomer
CommentsSlight decomposition. Evaporate Ta in 10-3 Torr O2

Tantalum Oxide Sputtering Targets

Overview
Tantalum pentoxide (Ta₂O₅), also known as tantalum(V) oxide, is a high-purity, white, inert solid with exceptional properties that make it ideal for advanced applications. It has a high refractive index, low absorption, and is insoluble in solvents, though it is reactive with strong bases and hydrofluoric acid. Ta₂O₅ is commonly used in coatings and the production of capacitors, thanks to its high dielectric constant.

Product Information

  • Purity: 99.95%
  • Circular Dimensions: Diameter ≤ 14 inch, Thickness ≥ 1mm
  • Block Dimensions: Length ≤ 32 inch, Width ≤ 12 inch, Thickness ≥ 1mm

Applications

  • Ferroelectric
  • Gate Dielectric
  • For CMOS

Features

  • High Purity (99.95% minimum)
  • Excellent dielectric properties
  • Custom sizes available for various applications

Manufacturing Process

  • Cold pressed and sintered
  • Elastomer bonded to backing plate
  • Cleaned for vacuum use, with protection against environmental contaminants during shipment

Options

  • 99.95% minimum purity
  • Smaller sizes available for R&D applications
  • Sputtering target bonding service available

TFM offers high-quality Tantalum Oxide Sputtering Targets suitable for a wide range of applications, including thin film deposition and capacitor production.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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