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ST1004 Terbium Iron Cobalt Sputtering Target, Tb-Fe-Co

Chemical FormulaTb-Fe-Co
Catalog No.ST1004
CAS Number–
Purity99.9%, 99.95%, 99.99%, 99.995%, 99.999%
ShapeDiscs, Plates, Column Targets, Step Targets, Custom-made

With deep expertise in materials science, TFM presents Terbium Iron Cobalt Sputtering Targets, known for their high purity. TFM is dedicated to excellence in materials engineering, offering customized solutions and competitive pricing for nanotechnology and thin-film deposition applications.

MSDS File

Terbium Iron Cobalt Sputtering Target Description

The Terbium Iron Cobalt Sputtering Target is a critical material in the sputtering deposition process, a technique widely used for creating thin films. During sputtering, atoms or ions are ejected from the solid target material and deposited onto a substrate to form a thin film.

This target is renowned for its unique magnetic properties and is frequently employed in producing magnetic thin films. Terbium Iron Cobalt (TbFeCo) thin films are explored for their potential in magnetic storage devices, such as magnetic recording media and magnetic sensors. These thin films can display valuable magnetic characteristics, including high coercivity and magnetization, which are crucial for effective magnetic storage and sensing applications.

Related Product: Aluminum Telluride Sputtering Target, Antimony Telluride Sputtering Target

Terbium Iron Cobalt Sputtering Target Specifications

Compound FormulaTb-Fe-Co
AppearanceSilver Metallic Target
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

Thick: 0.125″, 0.250″

Terbium Iron Cobalt Sputtering Target Handling Notes

Indium bonding is recommended for the Terbium Iron Cobalt Sputtering Target due to the material’s inherent characteristics that are less suitable for direct sputtering, such as brittleness and low thermal conductivity. This target material has low thermal conductivity and is prone to thermal shock, making indium bonding an effective solution to enhance performance and reliability during the sputtering process.

Terbium Iron Cobalt Sputtering Target Application

Electronic Manufacturing: Terbium Iron Cobalt Sputtering Targets are essential for electronic manufacturing, playing a crucial role in producing high-performance electronic devices due to their exceptional purity and unique material composition.

Advanced Materials Engineering: These targets are significant in advanced materials engineering, where their distinct properties contribute to the development of innovative materials with enhanced characteristics.

Nanotechnology Applications: Terbium Iron Cobalt Sputtering Targets are pivotal in nanotechnology, showcasing their adaptability and contributing to advancements in cutting-edge technologies.

Thin-Film Deposition: These targets are instrumental in thin-film deposition processes, ensuring precise and uniform coatings essential for various industrial and research applications.

Terbium Iron Cobalt Sputtering Target Packaging

Our Terbium Iron Cobalt Sputtering Target is meticulously handled during storage and transportation to ensure the product’s quality is maintained in its original condition.

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At TFM, we offer Terbium Iron Cobalt Sputtering Targets in a wide range of forms, purities, and dimensions. Our expertise lies in crafting high-purity physical vapor deposition (PVD) materials, ensuring exceptional density and minimal average grain sizes. These targets are ideal for use in semiconductor applications, as well as in chemical vapor deposition (CVD) and physical vapor deposition (PVD) for display and optical technologies.

 

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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