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ST0516 Thorium Oxide Sputtering Target, ThO2

Chemical Formula: ThO2
Catalog Number: ST0516
CAS Number: 1314-20-1
Purity: 99.9%, 99.95%, 99.99%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Thorium Oxide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Thorium Oxide Sputtering Target Description

Thorium

Thorium, named after Thor, the Scandinavian god of thunder, is a chemical element first identified in 1829 by J. Berzelius. Its chemical symbol is “Th,” with an atomic number of 90. Located in Period 7 and Group 3 of the periodic table, it belongs to the f-block. Thorium has a relative atomic mass of 232.03806(2) Dalton, with the number in brackets indicating the uncertainty.

Thorium Oxide Sputtering Target Specifications

Material TypeThorium Oxide (ThO2)
SymbolThO2
Color/AppearanceWhite, Crystalline Solid
Purity99.9% min
Density9.7 g/cm³
Available SizesDiameter: 2.0″ to 16.0″
Thickness: 0.125″ to 1″
ShapeDisc, Plate, Custom-made

We also offer other customized shapes and sizes of the sputtering targets; please Contact Us for more information.

Thorium Oxide Sputtering Target Applications

Thorium Oxide Sputtering Targets are essential in several high-tech applications:
  • Optical Coatings: Provides high refractive index and excellent light transmission for precision coatings.
  • Thin-Film Electronics: Used in advanced thin-film transistors and integrated circuits.
  • Research and Development: Valuable for scientific research in materials science and condensed matter physics.
  • Semiconductor Fabrication: Crucial for depositing thin films in semiconductor device manufacturing.

Thorium Oxide Sputtering Target Packing

Our Thorium Oxide Sputtering Targets are clearly tagged and labeled to ensure efficient identification and quality control. We take great care to prevent any damage during storage or transportation.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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