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ST0330 Tin Telluride Sputtering Target, SnTe

Chemical Formula: SnTe
Catalog Number: ST0330
CAS Number: 12040-02-7
Purity: 99.9%, 99.95%, 99.99%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Tin Telluride sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Introduction

Tin Telluride (SnTe) sputtering targets are key materials for depositing IV–VI semiconductor thin films with unique electronic and optical properties. As a narrow bandgap semiconductor and a well-known topological crystalline insulator, SnTe is widely used in infrared devices, thermoelectric materials, and emerging quantum electronics. High-quality SnTe sputtering targets enable precise control over film composition and structure, which is critical for advanced functional thin films.

Detailed Description

Tin Telluride sputtering targets are typically produced with controlled stoichiometry (Sn:Te ≈ 1:1) using vacuum melting or hot pressing techniques to ensure high density and compositional uniformity. Maintaining the correct stoichiometric balance is essential, as deviations can significantly affect electrical conductivity, carrier concentration, and optical absorption properties.

SnTe exhibits a narrow bandgap (~0.18 eV at room temperature), making it highly suitable for infrared detection and thermoelectric applications. Its crystalline structure supports interesting electronic behaviors, including topological surface states, which are of increasing interest in next-generation electronics and spintronics.

Due to the relatively high vapor pressure of tellurium, careful processing and sputtering control are required to maintain film composition. High-density targets help reduce preferential sputtering and improve film uniformity. Targets can be supplied as planar or rotatable designs and are often bonded to copper backing plates to enhance thermal conductivity and mechanical stability during deposition.

Key features include:

  • Precise stoichiometry control for consistent semiconductor properties

  • High density and uniform microstructure for stable sputtering

  • Suitable for RF and DC magnetron sputtering systems

  • Optimized for infrared and thermoelectric thin films

  • Custom sizes, purities, and bonding configurations available

Applications

Tin Telluride sputtering targets are widely used in:

  • Infrared detectors and imaging systems

  • Thermoelectric devices for energy conversion

  • Topological insulator research and quantum materials

  • Semiconductor thin films and electronic devices

  • Optical coatings in the infrared region

  • Advanced R&D in condensed matter physics

Technical Parameters

ParameterTypical Value / RangeImportance
CompositionSnTe (Sn:Te ≈ 1:1)Determines semiconductor properties
Purity99.9% – 99.99%Reduces impurities affecting performance
Density≥ 95% – 99% theoreticalImproves sputtering stability
Diameter25 – 200 mm (custom)Fits sputtering systems
Thickness3 – 6 mmInfluences target lifetime
BondingCopper backing (In / elastomer)Enhances heat dissipation
Sputtering MethodRF / DC magnetronProcess compatibility

Comparison with Related Materials

MaterialKey AdvantageTypical Application
SnTeNarrow bandgap, topological propertiesIR devices, thermoelectrics
PbTeHigh thermoelectric efficiencyThermoelectric modules
SnSeExceptional thermoelectric performanceEnergy conversion
GeTePhase-change and semiconductor behaviorMemory devices

FAQ

QuestionAnswer
Can the stoichiometry be adjusted?Yes, slight adjustments can be made depending on application requirements.
What sputtering method is recommended?RF sputtering is commonly used for compound semiconductors like SnTe.
Is bonding required?For high-power sputtering, bonding to a copper backing plate is recommended.
What are the key challenges in deposition?Maintaining stoichiometry due to tellurium volatility requires optimized sputtering parameters.
Which industries use SnTe targets most?Semiconductor, infrared technology, and advanced materials research.

Packaging

Our Tin Telluride Sputtering Targets are meticulously tagged and labeled externally to ensure efficient identification and maintain high standards of quality control. We take great care to prevent any potential damage during storage and transportation, ensuring the targets arrive in perfect condition.

Conclusion

Tin Telluride sputtering targets provide a reliable platform for depositing advanced semiconductor thin films with unique electronic and optical properties. With precise composition control and customizable configurations, they are ideal for infrared technologies, thermoelectric devices, and cutting-edge research applications.

For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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