Thin Film Materials Logo
Generic selectors
Exact matches only
Search in title
Search in content
Post Type Selectors
tib2-removebg-preview-1

ST0300 Titanium Boride Sputtering Target, TiB2

Chemical Formula: TiB2
Catalog Number: ST0300
CAS Number: 12045-63-5
Purity: 99.5%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Titanium Boride sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Titanium Boride Sputtering Target Description

A Titanium Boride Sputtering Target is a type of ceramic material composed of titanium and boron, commonly used in sputtering processes. This target is typically utilized in thin film deposition and various specialized applications due to the unique properties of the titanium-boron combination.

Titanium

Titanium is a chemical element with the symbol “Ti” and an atomic number of 22. It is named after the Titans, the sons of the Earth goddess in Greek mythology. The element was first mentioned in 1791 by William Gregor, with its isolation later achieved and announced by Jöns Jakob Berzelius. Titanium is located in Period 4 and Group 4 of the periodic table, classified within the d-block elements. Its relative atomic mass is approximately 47.867 Daltons, with the number in parentheses indicating a margin of uncertainty.

Related Product: Titanium Sputtering Target

BoronBoron is a chemical element with the symbol “B” and an atomic number of 5. Its name is derived from the Arabic word ‘buraq,’ which referred to borax. It was first identified in 1808 by scientists Louis-Joseph Gay-Lussac and Louis-Jacques Thénard, with the element’s isolation later achieved and announced by Sir Humphry Davy. Boron is located in Period 2 and Group 13 of the periodic table, belonging to the p-block elements. Its relative atomic mass is approximately 10.811 Daltons, with the number in parentheses indicating a margin of uncertainty.

Titanium Boride Sputtering Target Specification

Compound FormulaTiB2
AppearanceSolid
Density4.5 g/cm3
Melting Point2,900 °C
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

Titanium Boride Sputtering Target Application

The Titanium Boride Sputtering Target is utilized in various applications, including thin film deposition and decorative coatings. It is widely used in the semiconductor industry, display technologies, and the manufacturing of LEDs and photovoltaic devices. Additionally, this material is important for functional coatings, the optical information storage industry, glass coating applications for automotive and architectural purposes, and optical communication technologies.

Titanium Boride Sputtering Target Packing

Our Titanium Boride Sputtering Targets are carefully tagged and labeled on the exterior to ensure efficient identification and maintain high standards of quality control. We take extensive measures to prevent any potential damage during storage and transportation, ensuring the targets arrive in perfect condition.

Get Contact

TFM offers Titanium Boride Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

Reviews

There are no reviews yet.

Be the first to review “ST0300 Titanium Boride Sputtering Target, TiB2”

Your email address will not be published. Required fields are marked *

Related Products

Related products

FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
Shopping Cart
Scroll to Top