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ST0230 Tungsten Carbide Sputtering Target, WC

Chemical Formula: WC
Catalog Number: ST0230
CAS Number: 12070-12-1
Purity: 99.5%, 99.9%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Tungsten Carbide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Tungsten Carbide Sputtering Target Description

Tungsten Carbide sputtering target from TFM is a carbide ceramic material with the chemical formula WC. This material is known for its exceptional hardness and high melting point, making it ideal for various industrial applications, including thin film deposition, cutting tools, and wear-resistant coatings.

TungstenTungsten, also known as wolfram, is a chemical element whose name originates from the Swedish term ‘tung sten,’ meaning heavy stone. The symbol “W,” derived from the mineral name wolframite, is the canonical symbol for tungsten. It was first mentioned in 1781 and observed by T. Bergman, with its isolation later achieved and announced by J. and F. Elhuyar. Tungsten has an atomic number of 74 in the periodic table, located in Period 6 and Group 6, within the d-block. The relative atomic mass of tungsten is 183.84(1) Dalton, with the number in brackets indicating the measurement uncertainty.

Related Product: Tungsten (W) Sputtering Target

CarbonCarbon is a chemical element that gets its name from the Latin word ‘carbo,’ which means charcoal. It has been known and used since at least 3750 BC, with early uses attributed to the Egyptians and Sumerians. The symbol “C” is universally recognized as the chemical symbol for carbon. In the periodic table, carbon has the atomic number 6, placing it in Period 2 and Group 14 within the p-block. The relative atomic mass of carbon is approximately 12.0107(8) Dalton, with the number in brackets indicating the uncertainty in this measurement.

Tungsten Carbide Sputtering Target Packaging

Our Tungsten Carbide Sputtering Target is meticulously tagged and labeled externally to ensure clear identification and maintain strict quality control. We take extensive care in handling and packaging these targets to prevent any damage during storage and transportation, thereby preserving the product’s integrity and ensuring it arrives in optimal condition.

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TFM offers Tungsten Carbide Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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