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ST0230 Tungsten Carbide Sputtering Target, WC

Chemical Formula: WC
Catalog Number: ST0230
CAS Number: 12070-12-1
Purity: 99.5%, 99.9%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Tungsten Carbide sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Introduction

Tungsten Carbide (WC) Sputtering Targets are high-density ceramic–metal composite materials engineered for depositing extremely hard, wear-resistant, and chemically stable thin films. Known for its exceptional hardness, high melting point, and excellent mechanical strength, WC is widely used in protective coatings, tooling applications, and advanced surface engineering.

WC sputtering targets enable the formation of durable carbide-based films that enhance surface performance in harsh mechanical and chemical environments.

Detailed Description

Tungsten Carbide is a refractory compound composed of tungsten (W) and carbon (C), typically in a near 1:1 atomic ratio. It features a hexagonal crystal structure and exhibits outstanding hardness and thermal stability, with a melting point exceeding 2800°C.

High-quality WC sputtering targets are produced through advanced powder metallurgy and hot pressing or hot isostatic pressing (HIP). Key manufacturing controls ensure:

  • High relative density (≥ 99% theoretical density typical)

  • Uniform WC phase distribution

  • Controlled carbon content

  • Minimal free tungsten or graphite phases

Maintaining stoichiometric balance is essential, as deviations can affect film hardness, adhesion, and electrical properties. Due to its conductive nature, WC is compatible with DC magnetron sputtering, while RF sputtering may also be used in certain configurations.

For high-power sputtering systems or large-area deposition equipment, WC targets can be bonded to copper backing plates to improve heat dissipation and mechanical stability during extended deposition cycles.

Applications

Tungsten Carbide sputtering targets are widely used in:

  • Wear-Resistant Coatings
    Protective films for cutting tools, molds, and mechanical components.

  • Hard Protective Layers
    Surface enhancement for industrial tooling and aerospace parts.

  • Barrier Coatings
    Diffusion barrier layers in semiconductor and microelectronic devices.

  • Decorative & Functional Coatings
    Durable coatings with dark metallic appearance.

  • Chemical & Corrosion Protection
    Coatings in aggressive industrial environments.

  • Advanced Materials Research
    R&D in carbide thin films and nanostructured coatings.

Technical Parameters

ParameterTypical Value / RangeImportance
Chemical FormulaWCDefines carbide composition
Purity99.5% – 99.99%Minimizes impurity phases
Density≥ 99% theoretical densityEnsures stable sputtering rate
Diameter1″ – 8″ (custom available)Matches cathode systems
Thickness3 – 10 mmInfluences lifetime
BondingCu backing plate optionalImproves heat transfer
Sputtering MethodDC magnetron preferredSuitable for conductive carbides

Comparison with Related Materials

MaterialKey AdvantageTypical Application
Tungsten Carbide (WC)Extremely high hardness & wear resistanceTool coatings
Titanium Carbide (TiC)Lower density, good hardnessProtective films
Chromium Carbide (Cr₃C₂)Oxidation resistance at elevated tempsHigh-temperature coatings
Pure Tungsten (W)High melting point, ductile metalBarrier layers

WC is selected when maximum hardness, abrasion resistance, and structural stability are critical.

FAQ

QuestionAnswer
Is WC suitable for DC sputtering?Yes, WC’s electrical conductivity makes it compatible with DC magnetron sputtering.
Can the carbon content be customized?Yes, stoichiometry can be adjusted based on film performance requirements.
Is bonding recommended?For large-diameter or high-power applications, copper backing plates improve stability.
Are rotary targets available?Yes, rotary configurations can be supplied for industrial coating lines.
How is the target packaged?Vacuum-sealed with protective cushioning and export-grade cartons or wooden crates.

Packaging

Our Tungsten Carbide Sputtering Targets are meticulously tagged and labeled externally to ensure efficient identification and maintain high standards of quality control. We take great care to prevent any potential damage during storage and transportation, ensuring the targets arrive in perfect condition.

Conclusion

Tungsten Carbide (WC) Sputtering Targets provide a reliable and high-performance solution for depositing hard, wear-resistant thin films. With controlled stoichiometry, high density, and customizable configurations, WC targets support demanding industrial coatings and advanced materials research.

For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

Order Now

WC target ø3"×0.125" 3mm Cu backing

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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