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Zinc Oxide Substrate (ZnO)

TFM Zinc Oxide (ZnO) Substrate

TFM offers high-quality Zinc Oxide (ZnO) substrates, ideal for GaN film growth and widely used in optoelectronics, UV devices, and high-temperature electronics. ZnO features a 3.73 eV band-gap with a 60 meV exciton binding energy at room temperature, making it an exceptional material for ultraviolet and visible light luminescence.

Zinc Oxide Substrate Physical Properties

PropertyDetails
MaterialZnO
Growth MethodMOCVD
Crystal StructureHexagonal
Lattice (Å)a = 3.252, c = 5.313
Direction<0001> 3.5º
Density (g/cm³)5.7 g/cm³
Hardness (Mohs)4.0
Melting Point1975°C
Thermal Expansion Coefficient (CTE)6.5 x 10⁻⁶ /°C along a axis, 3.7 x 10⁻⁶ /°C along c axis
Seebeck Coefficient1200 μV/K @ 300°C
Thermal Conductivity0.006 Cal/cm·K
Optical Transmission> 50% for 2 mm thickness (wavelength 400 nm ~ 600 nm)

Zinc Oxide Substrate Specifications

SpecificationDetails
Size25x25x0.5 mm, 10x10x0.5 mm, 10x5x0.5 mm, 5x5x0.5 mm
Thickness0.5 mm
Crystal Orientation<0001>, <11-20>, <10-10>
PolishedSSP or DSP
Redirection Precision±0.5°
Edge Redirection2° (special in 1°)
Angle of CrystallineSpecial sizes and orientations available upon request
Surface Roughness (Ra)≤ 5 Å (5 μm × 5 μm)

Zinc Oxide Substrate Packaging

TFM ensures that all Zinc Oxide substrates are carefully packaged in a class 100 clean bag or wafer container within a class 1000 clean room, ensuring maximum protection during transport.

Opt for TFM’s Zinc Oxide substrates for high-performance applications in optoelectronics and UV devices, offering superior material properties for your advanced semiconductor needs.

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FAQ

A thin film substrate is the base material upon which thin layers of materials are deposited to create electronic, optical, or mechanical devices. The substrate provides structural support and can influence the properties of the thin film.

The choice of substrate affects the film’s structural integrity, electrical properties, and overall performance. Factors like thermal expansion coefficient, surface smoothness, and chemical compatibility are crucial considerations.

Materials such as lanthanum aluminate (LaAlO₃), magnesium oxide (MgO), and strontium titanate (SrTiO₃) are commonly used due to their lattice compatibility and thermal stability, which are essential for optimal superconducting properties.

Metal substrates offer high electrical and thermal conductivity, making them suitable for applications requiring efficient heat dissipation and electrical connectivity. However, their surface properties and potential for oxidation must be managed during deposition.

These substrates are materials that can support the growth of thin films exhibiting magnetic or ferroelectric properties, essential for applications in memory devices, sensors, and actuators.

Semiconductor substrates, such as silicon wafers, serve as the foundation for integrated circuits and various electronic components, providing the necessary electrical characteristics and structural support for device fabrication.

Gallium Nitride (GaN) substrates are pivotal for high-performance optoelectronic and power devices due to their excellent thermal conductivity, high breakdown voltage, and efficiency. They are widely used in LEDs, power transistors, and RF components.

Halide crystal substrates, composed of halide compounds, are utilized in specialized optical applications, including infrared spectroscopy and laser systems, due to their unique optical properties.
Ceramic substrates provide high thermal stability, mechanical strength, and electrical insulation, making them ideal for high-frequency and high-power applications.
Proper surface preparation, including cleaning and polishing, ensures the removal of contaminants and surface irregularities, leading to improved film adhesion, uniformity, and performance.
Yes, thin films can be deposited on flexible substrates like polymers, enabling the development of flexible electronics and wearable devices. However, challenges include managing mechanical stress and ensuring film adhesion.
Challenges include ensuring lattice matching to minimize defects, managing thermal expansion differences to prevent stress and delamination, and achieving desired electrical and optical properties for specific applications.
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