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Zinc Oxysulfide Sputtering Target, ZnOS

Zinc Oxysulfide Sputtering Target

Introduction

Zinc Oxysulfide (ZnOS) Sputtering Target is a specialized material widely used in thin-film deposition, especially for optoelectronic and semiconductor research. With its tunable optical and electronic properties, ZnOS enables precise control over film characteristics, making it valuable in solar cells, transparent conductive films, and advanced coating technologies.

Detailed Description

The Zinc Oxysulfide Sputtering Target is typically produced by high-purity powder synthesis followed by densification techniques such as hot pressing or vacuum sintering. The material offers a unique combination of zinc, oxygen, and sulfur elements, giving it adjustable bandgap properties between ZnO and ZnS. This versatility allows researchers and manufacturers to tailor thin-film performance for specific device requirements.

Key characteristics include:

  • High Purity (3N–4N, 99.9–99.99%), ensuring minimal contamination during deposition.

  • Uniform Microstructure, which contributes to stable sputtering rates and consistent thin-film thickness.

  • Customizable Geometry, available in discs, rectangular plates, or step targets for different sputtering systems.

  • Bonding Options, such as copper or indium bonding, to improve thermal conductivity and mechanical stability during sputtering.

Applications

Zinc Oxysulfide Sputtering Targets are used across multiple industries:

  • Photovoltaics – buffer and window layers in thin-film solar cells.

  • Optoelectronics – LED structures and photodetectors requiring controlled bandgap properties.

  • Transparent Conductive Films – for displays, touch panels, and energy-efficient windows.

  • Research & Development – material science and semiconductor device prototyping.

Technical Parameters

ParameterTypical Value / RangeImportance
Purity99.9% – 99.99% (3N–4N)High purity ensures defect-free films
Diameter25 – 300 mm (customizable)Fits standard sputtering systems
Thickness3 – 10 mmAffects sputtering rate and lifetime
BondingIndium / Copper backingEnhances heat transfer and stability

Comparison with Related Materials

MaterialKey AdvantageTypical Application
ZnOSTunable bandgap, improved film controlSolar cells, transparent coatings
ZnOHigh transparency, conductivityDisplay technologies
ZnSWide bandgap, optical applicationsOptics and photonics

FAQ

QuestionAnswer
Can the ZnOS target be customized?Yes, diameter, thickness, purity, and bonding can be tailored to your system.
How is the product packaged?Vacuum-sealed with foam protection, shipped in export-grade cartons or wooden crates.
What industries use ZnOS most?Solar energy, optoelectronics, display manufacturing, and advanced R&D.
Does ZnOS improve solar cell efficiency?Yes, its tunable bandgap enables better light absorption and conversion efficiency.

Packaging

Our Zinc Oxysulfide Sputtering Targets are carefully vacuum-packed and externally labeled to ensure traceability and protection. Each target is cushioned with shock-absorbing foam and shipped in export-compliant cartons or wooden crates to prevent damage during transit.

Conclusion

Zinc Oxysulfide Sputtering Target offers unique optical and electronic flexibility, making it an excellent choice for cutting-edge thin-film technologies. With high purity, stable performance, and customizable specifications, it supports a wide range of industrial and research applications.

For detailed specifications or a quotation, please contact us at sales@thinfilmmaterials.com.

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ZnOS target 4N Zn50/O25/S25 at% ø50.8×3.18mm Indium Bonded Cu B/Plate, ZnOS target 4N Zn50/O35/S15 at% ø50.8×3.18mm Indium Bonded Cu B/Plate

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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