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ST0048 Tantalum Sputtering Target, Ta

Chemical Formula:Ta
Catalog Number: ST0048
CAS Number: 7440-25-7
Purity: 99.95%, 99.99%, 99.999%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Tantalum sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Introduction

The Tantalum Sputtering Target (Ta) is a high-purity refractory metal target widely used in thin film deposition for semiconductor manufacturing, electronics, and protective coatings. Tantalum is valued for its excellent corrosion resistance, high melting point, and superior chemical stability, making it an ideal material for advanced thin film applications.

When deposited using magnetron sputtering or other physical vapor deposition (PVD) techniques, tantalum forms dense, uniform metallic films with strong adhesion and outstanding barrier properties. These films are widely used in semiconductor diffusion barriers, microelectronic interconnect structures, and high-performance protective coatings.

Detailed Description

Tantalum sputtering targets are typically produced from high-purity tantalum metal using advanced metallurgical processes such as powder metallurgy, vacuum melting, forging, and hot isostatic pressing (HIP). These manufacturing methods ensure high density, fine grain structure, and uniform composition throughout the target.

One of the key characteristics of tantalum is its exceptional resistance to corrosion and chemical attack, particularly in harsh environments. Tantalum also has a very high melting point of approximately 3017 °C, which contributes to its excellent thermal stability in high-temperature deposition processes.

In semiconductor fabrication, tantalum thin films are commonly used as diffusion barrier layers between copper interconnects and silicon-based substrates. These barrier layers help prevent copper diffusion, improving device reliability and performance.

High-density tantalum sputtering targets provide stable sputtering rates and consistent thin film properties. For high-power sputtering systems, targets are often supplied as bonded targets with copper backing plates, typically using indium bonding to enhance heat dissipation and mechanical stability during deposition.

Applications

Tantalum sputtering targets are used across many advanced technology industries:

  • Semiconductor manufacturing, particularly diffusion barrier layers

  • Microelectronics and integrated circuits

  • Thin film resistors and capacitors

  • Protective coatings for corrosion and wear resistance

  • Optical and functional coatings

  • Research and development in advanced materials science

Technical Parameters

ParameterTypical Value / RangeImportance
Chemical SymbolTaDefines elemental composition
Purity99.9% – 99.99%Ensures high-quality thin films
Diameter25 – 300 mm (custom)Compatible with standard sputtering systems
Thickness3 – 6 mmInfluences sputtering efficiency and target lifetime
Density≥ 99% theoretical densityEnsures stable sputtering performance
BondingCopper backing plate / Indium bondedImproves heat dissipation during deposition

Comparison with Related Materials

MaterialKey AdvantageTypical Application
Tantalum (Ta)Excellent diffusion barrier and corrosion resistanceSemiconductor interconnect layers
Titanium (Ti)Good adhesion and barrier propertiesSemiconductor barrier layers
Tungsten (W)High hardness and thermal stabilityMicroelectronics and protective coatings

FAQ

QuestionAnswer
What sputtering methods are suitable for tantalum targets?Tantalum sputtering targets are commonly used in DC magnetron sputtering systems.
Can tantalum targets be customized?Yes. Diameter, thickness, purity, and bonding options can be customized according to system requirements.
Are bonded sputtering targets available?Yes. Tantalum targets are often bonded to copper backing plates using indium bonding for improved thermal conductivity.
What purity levels are available for tantalum targets?Typical purities range from 99.9% to 99.99% depending on application requirements.
What substrates can tantalum films be deposited on?Tantalum films can be deposited on silicon wafers, glass, ceramics, and metal substrates.

Packaging

Our Tantalum Sputtering Target (Ta) products are meticulously tagged and labeled externally to ensure efficient identification and maintain strict quality control standards. Each target is packaged in vacuum-sealed bags with protective foam and export-grade cartons or wooden crates to prevent contamination and mechanical damage during storage and transportation.

Conclusion

The Tantalum Sputtering Target (Ta) is a critical material for depositing high-performance thin films used in semiconductor devices, microelectronics, and advanced protective coatings. Its outstanding corrosion resistance, thermal stability, and barrier properties make it one of the most reliable materials for modern thin film technologies.

With high-purity tantalum, customizable dimensions, and stable sputtering performance, tantalum sputtering targets provide a dependable solution for both industrial manufacturing and advanced research applications.

For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

Order Now

Ø1" × 6.35 mm, Tantalum (Ta), 3N5, Ø2" × 2.5 mm, Tantalum (Ta), 4N, Ø2" × 3.18 mm, Tantalum (Ta), 3N5, Ø2" × 5 mm, Tantalum (Ta), 4N, Ø2" × 6.35 mm, Tantalum (Ta), 3N5, Ø3" × 3 mm, Tantalum (Ta), 3N5, Bonded to 3 mm Cu Backing Plate, Ø3" × 3.18 mm, Tantalum (Ta), 3N5, Ø3" × 6.35 mm, Tantalum (Ta), 3N5, Ø4" × 6 mm, Tantalum (Ta), 4N, with Keeper

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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