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ST0052 Tin Sputtering Target, Sn

Chemical Formula: Sn
Catalog Number: ST0052
CAS Number: 7440-31-5
Purity: 99.9%, 99.95%, 99.99%, 99.995%, 99.999%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Tin sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

CoA_Sn_TRG

Tin Sputtering Target Description

Tin

T

Introduction

Tin Sputtering Targets are essential deposition materials for producing functional thin films used in electronics, optics, energy devices, and surface engineering. Owing to tin’s excellent electrical conductivity, low melting point, and compatibility with alloying systems, high-purity tin targets are widely applied in both research and industrial Physical Vapor Deposition (PVD) processes.

Detailed Description

Tin sputtering targets are manufactured from refined, high-purity tin using controlled melting and forming processes to ensure uniform composition and consistent density. Because tin is a relatively soft metal with a low melting point, careful control of target flatness, surface finish, and bonding quality is critical to achieve stable sputtering performance and long target life.

Targets can be supplied unbonded for small diameters or low-power applications, or bonded to copper backing plates to improve thermal conductivity and mechanical stability during higher-power magnetron sputtering. Proper bonding helps prevent warping, localized overheating, and premature target failure.

Tin targets are compatible with DC magnetron sputtering and are also commonly used as alloy components (e.g., ITO, SnO₂-based films, or metal alloy layers) where precise compositional control is required.

Applications

  • Transparent conductive and oxide thin films

  • Semiconductor and microelectronic coatings

  • Solderable and conductive layers

  • Decorative and corrosion-resistant coatings

  • Thin film research and materials development

Technical Parameters

ParameterTypical Value / RangeImportance
MaterialTin (Sn)Conductive functional metal
Purity99.9% – 99.999%Impurity control affects film quality
FormDisc / Plate (bonded or unbonded)Fits sputtering systems
Diameter25 – 300 mm (custom)Matches magnetron cathodes
Thickness3 – 6 mm (typical)Influences target lifetime
Backing PlateCopper (optional)Improves heat dissipation

Comparison with Related Materials

MaterialKey AdvantageTypical Application
Tin (Sn)Low melting point, good conductivityElectronics & coatings
Indium (In)Soft metal, oxide applicationsTransparent electrodes
Zinc (Zn)Cost-effectiveProtective & functional films

FAQ

QuestionAnswer
Can tin sputtering targets be customized?Yes, size, purity, thickness, and bonding can be tailored.
Are bonded tin targets recommended?Yes, copper-backed targets are preferred for higher power sputtering.
Is DC sputtering suitable for tin?Yes, tin is commonly used with DC magnetron sputtering.
Can large-diameter targets be supplied?Yes, targets up to 300 mm or larger can be produced on request.
Is a Certificate of Analysis available?Yes, CoA is available upon request.

Packaging

Our Tin Sputtering Targets are cleaned for vacuum service, individually labeled, and vacuum-sealed to prevent oxidation and contamination. Shock-absorbing materials and export-grade cartons or wooden crates ensure safe transportation and storage.

Conclusion

Tin Sputtering Targets deliver stable sputtering behavior, high purity, and excellent process compatibility for a wide range of thin film applications. With flexible customization options and consistent quality control, they are a reliable choice for electronic, optical, and research-driven PVD processes.
For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

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Tin Target Sn 3N ø100*3mm, Sn TRG 4N ø50.8×3.18mm Indium Bonded 3mm Cu B/Plate, Sn target ≥99.95% ø101.6×10 mm, Sn target 4N ø200×6 mm

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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