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Copper Germanium Sputtering Target

ST0087 Copper Germanium Sputtering Target, Cu/Ge

Chemical Formula: Cu/Ge
Catalog Number: ST0087
CAS Number: 7440-50-8 | 7440
Purity: 99.9%, 99.95%, 99.99%, 99.995%, 99.999%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Copper Germanium sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Introduction

Copper Germanium Sputtering Targets are alloy deposition materials used in advanced microelectronics and thin film research where controlled electrical behavior, diffusion characteristics, and interfacial stability are required. By introducing germanium into copper, Cu–Ge targets enable tailored film properties for next-generation semiconductor and functional coating applications.

Detailed Description

Copper Germanium sputtering targets are manufactured from high-purity copper and germanium using carefully controlled alloying and consolidation processes. Uniform elemental distribution and high target density are critical to achieving stable sputtering rates, compositional consistency, and repeatable thin film performance.

These targets are available in unbonded form for smaller diameters or low-power applications, as well as bonded to copper backing plates for improved thermal conductivity and mechanical stability during high-power magnetron sputtering. Precision machining ensures tight thickness tolerances, flatness, and smooth surfaces, helping reduce arcing, particle generation, and localized overheating.

The germanium content can be adjusted to meet specific electrical or diffusion requirements, making Cu–Ge targets suitable for both R&D and pilot-scale production environments.

Applications

  • Semiconductor metallization and interconnect layers

  • Diffusion barrier and contact engineering research

  • Thin film resistive and functional coatings

  • Microelectronics and MEMS devices

  • Advanced materials and process development studies

Technical Parameters

ParameterTypical Value / RangeImportance
MaterialCopper Germanium (Cu–Ge)Tunable alloy properties
CompositionCustom Ge wt.% or at.%Controls electrical & diffusion behavior
Purity99.9% – 99.99%Impurity control affects film reliability
FormDisc / Plate (bonded or unbonded)Fits sputtering systems
Diameter25 – 300 mm (custom)Matches magnetron cathodes
Thickness3 – 6 mm (typical)Influences target lifetime
Backing PlateCopper (optional)Enhances heat dissipation

Comparison with Related Materials

MaterialKey AdvantageTypical Application
Copper GermaniumControlled diffusion & resistivitySemiconductor interconnects
Pure CopperHigh conductivityStandard metallization
Copper ChromiumImproved adhesionFunctional & barrier layers

FAQ

QuestionAnswer
Can the Ge content be customized?Yes, germanium concentration can be tailored to your process.
Are bonded targets available?Yes, copper-backed targets are available for high-power sputtering.
Is DC sputtering suitable?Yes, Cu–Ge targets are commonly used with DC magnetron sputtering.
Can you supply large-diameter targets?Yes, targets up to 300 mm or larger can be produced on request.
Is a Certificate of Analysis provided?Yes, CoA is available upon request.

Packaging

Our Copper Germanium Sputtering Targets are cleaned for vacuum service, individually labeled, and vacuum-sealed to prevent oxidation and contamination. Shock-absorbing materials and export-grade cartons or wooden crates are used to ensure safe delivery.

Conclusion

Copper Germanium Sputtering Targets provide reliable alloy uniformity, stable sputtering performance, and flexible composition control for advanced thin film deposition. With customizable specifications and consistent quality, they are well suited for semiconductor, microelectronic, and research-focused PVD applications.
For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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