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ST0331 Tungsten Telluride Sputtering Target, WTe2

Chemical Formula: WTe2
Catalog Number: ST0331
CAS Number: 12069-76-4
Purity: 99.9%, 99.95%, 99.99%, 99.995%, 99.999%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Tungsten Telluride sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Tungsten Telluride Sputtering Target Description

A Tungsten Telluride Sputtering Target is a type of ceramic material composed of tungsten and tellurium, used in sputtering processes. This target is typically employed in thin film deposition and various specialized applications due to the unique properties of the tungsten-tellurium combination.

TungstenTungsten, also known as wolfram or wolframium, is a chemical element with the symbol “W” and an atomic number of 74. The name “tungsten” comes from the Swedish words ‘tung sten,’ meaning heavy stone, while “W” is derived from “wolfram,” the old name for the tungsten mineral wolframite. It was first mentioned in 1781 and observed by Carl Wilhelm Scheele, with the isolation later accomplished and announced by the Elhuyar brothers, Juan José and Fausto. Tungsten is located in Period 6 and Group 6 of the periodic table, belonging to the d-block elements. Its relative atomic mass is approximately 183.84 Daltons, with the number in parentheses indicating a margin of uncertainty.

Related Product: Tungsten Sputtering Target

TelluriumTellurium is a chemical element with the symbol “Te” and an atomic number of 52. The name “tellurium” is derived from the Latin word ‘tellus,’ meaning Earth. It was first mentioned in 1782 and observed by Franz-Joseph Müller von Reichenstein. The isolation of tellurium was later accomplished and announced by Martin Heinrich Klaproth. Tellurium is located in Period 5 and Group 16 of the periodic table, classified within the p-block elements. Its relative atomic mass is approximately 127.60 Daltons, with the number in parentheses indicating a margin of uncertainty.

Tungsten Telluride Sputtering Target Specification

Compound FormulaWTe2
Molecular Weight439.04
AppearanceGray
Melting Point1020 °C
Boiling PointN/A
Density9.43 g/cm3
Available SizesDia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

Tungsten Telluride Sputtering Target Packing

Our Tungsten Telluride Sputtering Targets are meticulously tagged and labeled externally to ensure efficient identification and maintain high standards of quality control. We take extensive precautions to prevent any potential damage during storage and transportation, ensuring the targets arrive in perfect condition.

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TFM offers Tungsten Telluride Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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