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ST0887 Titanium Aluminum Silicon Sputtering Target, Ti/Al/Si

Titanium Aluminum Silicon sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

Introduction

Titanium Aluminum Silicon (Ti/Al/Si) Sputtering Targets are advanced alloy targets designed for the deposition of high-performance thin films used in semiconductor, microelectronics, and protective coating applications. By combining titanium’s excellent adhesion and hardness with aluminum’s oxidation resistance and silicon’s structural stability, Ti/Al/Si alloys offer a balanced combination of mechanical durability, thermal stability, and electrical performance.

These sputtering targets are widely used in Physical Vapor Deposition (PVD) processes such as magnetron sputtering, where precise composition control is essential for creating uniform thin films with reliable functional properties. The Ti/Al/Si system has become increasingly important in modern thin film technologies due to its ability to form dense, oxidation-resistant coatings with improved thermal stability compared to traditional binary alloys.

Detailed Description

Titanium Aluminum Silicon sputtering targets are engineered alloy materials specifically optimized for thin film deposition. The combination of titanium, aluminum, and silicon provides synergistic properties that enhance the performance of deposited coatings.

Titanium serves as the primary structural component of the alloy. It contributes strong adhesion to substrates, excellent hardness, and high-temperature stability. Aluminum enhances oxidation resistance and improves the formation of protective oxide layers, which is particularly beneficial for coatings exposed to elevated temperatures or corrosive environments. Silicon acts as a stabilizing element that improves grain refinement and enhances the structural integrity of the deposited film.

During magnetron sputtering, the Ti/Al/Si target gradually releases atoms of each element into the plasma, allowing the deposition of multi-component thin films with controlled stoichiometry. The presence of silicon in the alloy helps suppress excessive grain growth, leading to finer microstructures and improved mechanical properties in the final coating.

Ti/Al/Si sputtering targets are commonly manufactured through powder metallurgy or vacuum melting techniques to achieve high density and homogeneous composition. High-density targets are essential for maintaining stable sputtering rates and preventing particle generation during deposition. Depending on system requirements, targets can be supplied as bonded assemblies with copper or titanium backing plates to enhance heat dissipation and mechanical stability during high-power sputtering operations.

The alloy composition can also be customized to meet specific coating requirements. Adjusting the relative concentrations of titanium, aluminum, and silicon allows users to tune properties such as hardness, oxidation resistance, electrical conductivity, and thermal stability.

Applications

Titanium Aluminum Silicon sputtering targets are widely used in industries that require durable, high-performance thin films. Typical applications include:

  • Semiconductor manufacturing for barrier layers and functional thin films

  • Microelectronics and integrated circuits where stable conductive or protective coatings are required

  • Hard protective coatings for cutting tools and industrial components

  • Wear-resistant coatings used in mechanical systems and aerospace components

  • High-temperature oxidation-resistant coatings for turbine and engine parts

  • Decorative and functional coatings in precision engineering applications

The ability to produce dense, thermally stable coatings makes Ti/Al/Si alloys valuable for both research and industrial-scale deposition systems.

Technical Parameters

ParameterTypical Value / RangeImportance
Purity99.9% – 99.99%Higher purity reduces contamination in deposited films
CompositionTi-Al-Si alloy (custom ratios)Determines mechanical and electrical properties
Density≥ 99% theoretical densityEnsures stable sputtering performance
Diameter25 – 300 mm (custom)Compatible with various sputtering systems
Thickness3 – 6 mmInfluences sputtering rate and target lifetime
BondingCopper / Titanium backing plateImproves heat transfer and mechanical stability

Comparison with Related Materials

MaterialKey AdvantageTypical Application
Titanium Aluminum Silicon (Ti/Al/Si)Excellent thermal stability and oxidation resistanceSemiconductor and protective coatings
Titanium Aluminum (Ti/Al)Strong hardness and oxidation resistanceHard coatings and wear protection
Titanium Silicon (Ti/Si)Improved diffusion barrier propertiesSemiconductor barrier layers
Titanium (Ti)Excellent adhesion and corrosion resistanceAdhesion layers and protective coatings

FAQ

QuestionAnswer
Can Ti/Al/Si sputtering targets be customized?Yes, the composition ratio, diameter, thickness, and bonding options can be customized to match different sputtering systems.
What deposition methods are suitable for this target?Ti/Al/Si targets are typically used in DC or RF magnetron sputtering systems.
Why add silicon to titanium aluminum alloys?Silicon improves grain refinement, enhances thermal stability, and increases oxidation resistance in deposited coatings.
What substrates are compatible with Ti/Al/Si coatings?Common substrates include silicon wafers, glass, ceramics, and various metals.
Are bonded targets available?Yes, targets can be supplied bonded to copper or titanium backing plates for improved thermal management.

Packaging

Our Titanium Aluminum Silicon Sputtering Targets are meticulously tagged and labeled externally to ensure efficient identification and maintain high standards of quality control. We take great care to prevent any potential damage during storage and transportation, ensuring the targets arrive in perfect condition.

Conclusion

Titanium Aluminum Silicon (Ti/Al/Si) sputtering targets offer an excellent combination of adhesion strength, oxidation resistance, and thermal stability, making them a reliable choice for advanced thin film deposition processes. Their multi-element composition allows precise tuning of coating properties for demanding semiconductor, microelectronics, and industrial applications.

With customizable compositions, dimensions, and bonding options, Ti/Al/Si sputtering targets provide flexibility for both research-scale experiments and high-volume production environments.

For detailed specifications and a quotation, please contact us at sales@thinfilmmaterials.com.

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TiAlSi TRG 48/50/2 at% 99.9% Ø200×6mm Doped with TiSi2

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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