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VD0805 Nickel Silicide Evaporation Materials, NiSi2

Catalog No.VD0805
MaterialNickel Silicide (NiSi2)
Purity99.9%
ShapePowder/ Granule/ Custom-made

TFM excels in manufacturing and supplying high-purity nickel silicide evaporation materials, along with a diverse selection of other evaporation materials. We provide these materials in both powder and granule forms, with options for custom formulations available upon request.

Nickel Silicide Evaporation Materials

Introduction

Nickel Silicide Evaporation Materials are advanced thin film sources used in semiconductor manufacturing, microelectronics, and metallization processes. As a key compound in the nickel–silicon system, nickel silicide (NiSi, Ni₂Si, or NiSi₂ depending on stoichiometry) is prized for its low resistivity, excellent thermal stability, and strong adhesion to silicon substrates. These properties make it an essential evaporation material for forming high-quality silicide layers in integrated circuits, Schottky barriers, and contact metallization.

Detailed Description

Nickel Silicide is a metallic compound formed by reacting nickel and silicon at controlled ratios and high temperatures. The resulting material exhibits metal-like conductivity with good diffusion resistance, ensuring stable electrical contact between metal and semiconductor layers.

Meticulously produced by high-temperature synthesis followed by crushing, purification, and vacuum sintering, Nickel Silicide evaporation materials provide:

  • Uniform composition: Ensures consistent stoichiometry for reproducible film properties.

  • High purity (up to 99.9%): Minimizes contamination during vacuum deposition.

  • Excellent adhesion and stability: Compatible with both silicon wafers and oxide layers.

  • High melting point (≈ 990–1,330 °C depending on phase): Suitable for thermal and e-beam evaporation systems.

  • Low resistivity: Enables reliable, ohmic contact formation in semiconductor devices.

They are typically available in pellets, granules, or pieces for use in thermal boats or electron-beam crucibles. Custom stoichiometry (NiSi, Ni₂Si, NiSi₂) can be tailored to specific deposition needs.

Applications

Nickel Silicide evaporation materials are widely used across advanced technology sectors:

  • Semiconductor manufacturing: Formation of self-aligned silicide (salicide) contacts in CMOS processes.

  • Microelectronics: Metal interconnects, diffusion barriers, and Schottky junctions.

  • Thin film resistors and contacts: Low-resistivity coatings on silicon and polysilicon.

  • Optical and decorative coatings: Metallic films requiring good reflectivity and durability.

  • Research & development: Used in thin film studies for nanoelectronics and material science.

Technical Parameters

ParameterTypical Value / RangeImportance
Chemical FormulaNiSi, Ni₂Si, or NiSi₂Different phases affect conductivity and thermal stability
Purity99.5% – 99.9%Higher purity ensures low impurity diffusion
Density6.3 – 6.7 g/cm³Affects film growth rate and uniformity
Melting Point990 – 1,330 °CSuitable for e-beam and thermal evaporation
Resistivity10–20 µΩ·cmEnables low-resistance electrical contacts
Evaporation MethodThermal / Electron-beamDetermines film quality and deposition rate
Particle Size3 – 6 mm (custom)Ideal for stable evaporation rate

Comparison with Related Materials

MaterialKey AdvantageTypical Application
Nickel Silicide (NiSi)Low resistivity, excellent adhesionSemiconductor contact layers
Titanium Silicide (TiSi₂)Higher temperature stabilityHigh-speed transistor contacts
Cobalt Silicide (CoSi₂)Good uniformity on narrow linesAdvanced CMOS devices

FAQ

QuestionAnswer
Which nickel silicide phase should I choose?NiSi is most common for low-resistance contacts, while Ni₂Si and NiSi₂ are used for specific temperature and resistivity requirements.
Can the product be customized?Yes. Purity, stoichiometry, shape, and packaging can be tailored according to your deposition system.
What evaporation systems are compatible?Suitable for both electron-beam and thermal evaporation systems under high vacuum.
Is it stable in air?Nickel silicide is relatively stable but should be stored in a vacuum-sealed or inert-gas-filled container to prevent surface oxidation.
How is it packaged for shipment?Each batch is vacuum-sealed, labeled with full traceability information, and cushioned in export-safe cartons or wooden crates.
Which industries commonly use it?Semiconductor, microelectronics, optoelectronics, and R&D laboratories.

Packaging

Our Nickel Silicide Evaporation Materials are carefully sealed under vacuum or inert gas to prevent oxidation. Each container is labeled with material name, composition, purity, batch number, and net weight. Protective foam and double-layer export packaging ensure safe transportation and long-term storage stability.

Conclusion

Nickel Silicide Evaporation Materials combine excellent electrical performance with strong thermal and chemical stability, making them a preferred choice for modern semiconductor and microelectronic thin film processes. Whether for contact formation, metallization, or barrier layers, NiSi-based materials deliver reliable and consistent film properties under demanding deposition conditions.

For detailed specifications and quotations, please contact us at [sales@thinfilmmaterials.com].

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FAQ

  • They are high‐purity substances (e.g. metals, alloys, or compounds) used in thermal or electron‐beam evaporation processes to form thin films on substrates.

  • Typically, they’re processed into a form (often ingots, pellets, or wires) that can be efficiently vaporized. Preparation emphasizes high purity and controlled composition to ensure film quality.

  • Thermal evaporation and electron-beam (e-beam) evaporation are the two main techniques, where material is heated (or bombarded with electrons) until it vaporizes and then condenses on the substrate.

  • Thermal evaporation heats the material directly (often using a resistive heater), while e-beam evaporation uses a focused electron beam to locally heat and vaporize the source material—each method offering different control and energy efficiency.

  • Key parameters include source temperature, vacuum level, deposition rate, substrate temperature, and the distance between the source and the substrate. These factors influence film uniformity, adhesion, and microstructure.

  • Evaporation generally produces high-purity films with excellent control over thickness, and it is especially suitable for materials with relatively low melting points or high vapor pressures.

  • Challenges include issues with step coverage (due to line-of-sight deposition), shadowing effects on complex topographies, and possible re-evaporation of material from the substrate if temperature isn’t properly controlled.

  • Common evaporation materials include noble metals (e.g., gold, silver), semiconductors (e.g., silicon, germanium), metal oxides, and organic compounds—each chosen for its specific optical, electrical, or mechanical properties.

  • Selection depends on desired film properties (conductivity, optical transparency, adhesion), compatibility with the evaporation process, and the final device application (semiconductor, optical coating, etc.).

  • Optimizing substrate temperature, deposition rate, and chamber vacuum are critical for ensuring that the film adheres well and forms the intended microstructure without defects.

  • Troubleshooting may involve checking the source material’s purity, ensuring stable source temperature, verifying the vacuum level, adjusting the substrate’s position or temperature, and monitoring deposition rate fluctuations.

While evaporation tends to yield very high purity films with excellent thickness control, it is limited by its line-of-sight nature. In contrast, sputtering can deposit films more uniformly on complex surfaces and is more versatile for a broader range of materials.

 

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