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ST0483 Aluminum Silicon Copper Sputtering Target, Al/Si/Cu

Chemical Formula: AlCuSi
Catalog Number: ST0483
Purity: 99.99%
Shape: Discs, Plates, Column Targets, Step Targets, Custom-made

Aluminum Silicon Copper sputtering target  come in various forms, purities, sizes, and prices. Thin Film Materials (TFM) manufactures and supplies top-quality sputtering targets at competitive prices.

MSDS File

Aluminum Silicon Copper Sputtering Target Description

AluminumAluminum, also known as aluminium, is a silvery-white, soft, non-magnetic, and ductile metal belonging to the boron group. Comprising about 8% of the Earth’s crust by mass, it is the third most abundant element after oxygen and silicon and the most prevalent metal in the crust. However, aluminum is less common in the Earth’s mantle. The primary ore of aluminum is bauxite. Due to its high reactivity, native aluminum is rare and typically found only in highly reducing environments; it is more commonly encountered in over 270 different mineral compounds.

CopperCopper is a chemical element whose name derives from the Old English word *coper*, which comes from the Latin *Cyprium aes*, meaning “metal from Cyprus.” First used around 9000 BC and discovered by people in the Middle East, copper has the chemical symbol “Cu” and is located in Period 4, Group 11 of the periodic table, within the d-block. Its atomic number is 29, and its relative atomic mass is 63.546, with the number in brackets indicating the uncertainty.

SiliconSilicon is a chemical element derived from the Latin *silex* or *silicis*, meaning flint. It was first mentioned in 1824 and observed by J. Berzelius, who also accomplished and announced its isolation. Silicon has the chemical symbol “Si” and is located in Period 3, Group 14 of the periodic table, within the p-block. Its atomic number is 14, and its relative atomic mass is 28.0855, with the number in brackets indicating the uncertainty.

Related Products: Aluminum sputtering target, Copper sputtering target.

Aluminum Silicon Copper Sputtering Target Specifications

Material TypeAluminum Silicon Copper
SymbolAl, Si, Cu
Available SizesDia.: 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″

We also offer other customized shapes and sizes of the sputtering targets; please Contact Us for more information.

Aluminum Silicon Copper Sputtering Target Application

The Aluminum Silicon Copper Sputtering Target is used in thin film deposition, decoration, semiconductors, displays, LEDs, and photovoltaic devices. It also serves in functional coatings, optical information storage, glass coatings (including automotive and architectural glass), and optical communication technologies.

Aluminum Silicon Copper Sputtering Target Packing

Our Aluminum Silicon Copper Sputtering Targets are clearly tagged and labeled for efficient identification and quality control. We take great care to prevent any damage during storage and transportation, ensuring the targets remain in excellent condition.

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TFM offers Aluminum Silicon Copper Sputtering Targets in various forms, purities, sizes, and prices. We specialize in high-purity thin film deposition materials with optimal density and minimal grain sizes, which are ideal for semiconductor, CVD, and PVD applications in display and optics. Contact Us for current pricing on sputtering targets and other deposition materials that are not listed.

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FAQ

It’s the source material (in solid form) used in sputter deposition to eject atoms or molecules that then form a thin film on a substrate.

Targets can be pure metals (e.g., gold, copper, aluminum), ceramics (e.g., Al₂O₃, SiO₂, TiO₂), alloys, or composites—chosen based on the film’s desired properties.

 

They are produced by processes such as melting/casting for metals or sintering (often with hot isostatic pressing) for ceramics and composite targets to ensure high density and purity.

 

In a vacuum chamber, a plasma (typically argon) bombards the target, ejecting atoms that travel and condense on a substrate, forming a thin film.

 

Key factors include the target’s purity, density, grain structure, and the sputtering yield (i.e. how many atoms are ejected per incident ion), as well as operating conditions like power density and gas pressure.

 

Operators monitor target erosion (often by measuring the depth of the eroded “race track”) or track total energy delivered (kilowatt-hours) until it reaches a threshold that can compromise film quality.

 

Fragile materials (such as many ceramics or certain oxides) and precious metals often require a backing plate to improve cooling, mechanical stability, and to allow thinner targets that reduce material costs.

 

DC sputtering is used for conductive targets, while RF sputtering is necessary for insulating targets (like many oxides) because it prevents charge buildup on the target’s surface.

 

In reactive sputtering, a reactive gas (e.g., oxygen or nitrogen) is introduced to form compound films on the substrate, but it may also “poison” the target surface if not carefully controlled.

 

Many manufacturers prefer to control raw material quality by sourcing their own powders; using external powders can risk impurities and inconsistent target properties.

 

Targets should be stored in clean, dry conditions (often in original packaging or re-wrapped in protective materials) and handled with gloves to avoid contamination, ensuring optimal performance during deposition.

Deposition rate depends on factors such as target material and composition, power density, working gas pressure, substrate distance, and the configuration of the sputtering system (e.g., magnetron design).

 
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